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TZX11-TAP PDF预览

TZX11-TAP

更新时间: 2024-11-05 20:48:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 136K
描述
Zener Diode, DO-35

TZX11-TAP 技术参数

生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.72
二极管类型:ZENER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

TZX11-TAP 数据手册

 浏览型号TZX11-TAP的Datasheet PDF文件第2页浏览型号TZX11-TAP的Datasheet PDF文件第3页浏览型号TZX11-TAP的Datasheet PDF文件第4页浏览型号TZX11-TAP的Datasheet PDF文件第5页浏览型号TZX11-TAP的Datasheet PDF文件第6页浏览型号TZX11-TAP的Datasheet PDF文件第7页 
TZX...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Order Instruction  
Type  
TZX2V4A  
Ordering Code  
TZX2V4A–TAP  
Remarks  
Ammopack  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
l=4 mm, T =25 C  
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=4 mm, T =constant  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
www.vishay.com  
1 (7)  
Document Number 85614  
Rev. A3, 12-Mar-01  

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