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TZX12-B PDF预览

TZX12-B

更新时间: 2024-11-06 14:36:31
品牌 Logo 应用领域
TEMIC 测试二极管
页数 文件大小 规格书
8页 95K
描述
Zener Diode, 12V V(Z), 2.11%, 0.5W, Silicon, Unidirectional, DO-35,

TZX12-B 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.7其他特性:LOW NOISE, VERY HIGH STABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:12 V表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL最大电压容差:2.11%
工作测试电流:5 mABase Number Matches:1

TZX12-B 数据手册

 浏览型号TZX12-B的Datasheet PDF文件第2页浏览型号TZX12-B的Datasheet PDF文件第3页浏览型号TZX12-B的Datasheet PDF文件第4页浏览型号TZX12-B的Datasheet PDF文件第5页浏览型号TZX12-B的Datasheet PDF文件第6页浏览型号TZX12-B的Datasheet PDF文件第7页 
TZX...  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
l=4mm,  
Type  
Symbol  
Value  
500  
Unit  
mW  
Power dissipation  
P
V
T =25 C  
L
Z–current  
I
P /V  
mA  
C
Z
V
Z
Junction temperature  
Storage temperature range  
T
175  
j
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
l=4mm, T =constant  
Symbol  
Value  
300  
Unit  
K/W  
Junction ambient  
R
thJA  
L
Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol  
Min  
Typ  
Max  
1.5  
Unit  
V
V
F
F
TELEFUNKEN Semiconductors  
1 (8)  
Rev. A1, 10-Mar-97  

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