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TZX12B PDF预览

TZX12B

更新时间: 2024-11-05 22:18:39
品牌 Logo 应用领域
美台 - DIODES 稳压二极管齐纳二极管测试局域网
页数 文件大小 规格书
4页 70K
描述
500mW EPITAXIAL PLANAR ZENER DIODE

TZX12B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-35包装说明:O-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.77外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:35 Ω
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:12 V
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2.11%
工作测试电流:5 mABase Number Matches:1

TZX12B 数据手册

 浏览型号TZX12B的Datasheet PDF文件第2页浏览型号TZX12B的Datasheet PDF文件第3页浏览型号TZX12B的Datasheet PDF文件第4页 
TZX2V4 - TZX36C  
500mW EPITAXIAL PLANAR ZENER DIODE  
Features  
·
·
·
Planar Die Construction  
500mW Power Dissipation on FR-4 PCB  
General Purpose, Medium Current  
A
B
A
C
Mechanical Data  
D
·
Case: DO-35, Glass  
DO-35  
Min  
25.40  
¾
·
Leads: Solderable per MIL-STD-202,  
Dim  
A
Max  
Method 208  
·
·
·
Marking: Type Number  
Polarity: Cathode Band  
Weight: 0.35 grams (approx.)  
¾
B
4.00  
0.60  
2.00  
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
¾
Value  
¾
Unit  
¾
Zener Current (See Table on page 2)  
Forward Voltage  
@ IF = 200mA  
VF  
1.5  
V
Pd  
Power Dissipation (Note 1)  
500  
mW  
K/W  
°C  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
300  
-65 to +175  
Notes:  
1. Valid provided that leads are kept at ambient temperature.  
2. Tested with pulses, t £ 1.0ms.  
DS30089 Rev. 1P-5  
1 of 4  
TZX2V4 - TZX36C  

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