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TXS02326

更新时间： 2024-11-23 08:31:51
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德州仪器 - TI 复用器
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35页 693K
描述
DUAL-SUPPLY 2:1 SIM CARD MULTIPLEXER/TRANSLATOR WITH AUTOMATIC DETECTION AND SLOT DEDICATED DUAL LDO

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TXS02326 数据手册

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TXS02326  
www.ti.com  
SCES795B –SEPTEMBER 2010–REVISED NOVEMBER 2010  
DUAL-SUPPLY 2:1 SIM CARD MULTIPLEXER/TRANSLATOR  
WITH AUTOMATIC DETECTION AND SLOT DEDICATED DUAL LDO  
Check for Samples: TXS02326  
1
FEATURES  
RGE PACKAGE  
(TOP VIEW)  
•
Level Translator  
V_I/O Range of 1.7 V to 3.3 V  
Low-Dropout (LDO) Regulator  
–
•
–
–
–
–
50-mA LDO Regulator With Enable  
24 23 22 21 20 19  
1.8-V or 2.95-V Selectable Output Voltage  
2.3-V to 5.5-V Input Voltage Range  
1
2
3
4
5
6
18  
IRQ  
RSTX  
SDN  
SIMI/O  
SIMCLK  
SIMRST  
NC  
SIM1CLK  
SIM1I/O  
17  
16  
15  
14  
13  
Exposed  
Thermal Pad  
Very Low Dropout: 100 mV (Max) at 50 mA  
BSI  
SIM2CLK  
SIM2I/O  
•
•
Control and Communication Through I2C  
Interface With Baseband Processor  
7
8 9 10 11 12  
ESD Protection Exceeds JESD 22  
–
–
2000-V Human-Body Model (A114-B)  
1000-V Charged-Device Model (C101)  
•
Package  
24-Pin QFN (4 mm x 4 mm)  
Note: The Exposed Thermal Pad must be  
connect to Ground.  
–
DESCRIPTION/ORDERING INFORMATION  
The TXS02326 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing  
wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset  
applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two  
SIMs/UICCs.  
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.  
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,  
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B  
and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for  
configuration purposes, a 32-kHz clock input for internal timing generation, a shutdown input and a comparator  
input detecting battery pack removal to safely power-down the two SIM cards, each equipped with two  
programmable debounce counter (i.e. BSI input and SDN input) circuit realized by an 8 bit counter.  
The voltage-level translator has two supply voltage pins. V_I/O sets the reference for the baseband interface and  
can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied  
by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V  
and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
QFN – RGE (Pin 1, Quadrant 2)  
QFN – RGE (Pin 1, Quadrant 1)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
YJ326  
YJ326  
TXS02326RGER  
–40°C to 85°C  
Tape and reel  
TXS02326MRGER  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2010, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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