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TTC5200 PDF预览

TTC5200

更新时间: 2024-11-05 07:07:59
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
5页 190K
描述
TOSHIBA Transistor Silicon NPN Triple Diffused Type

TTC5200 技术参数

生命周期:Active包装说明:2-21F1A, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:2.09
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
集电极-发射极最大电压:230 V配置:SINGLE
最小直流电流增益 (hFE):35JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

TTC5200 数据手册

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TTC5200  
TOSHIBA Transistor Silicon NPN Triple Diffused Type  
TTC5200  
Power Amplifier Applications  
Unit: mm  
High collector voltage: V  
= 230 V (min)  
CEO  
Complementary to TTA1943  
Recommended for 100-W high-fidelity audio frequency amplifier output  
stage.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
230  
230  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
15  
A
1.BASE  
C
2.COLLECTOR(HEAT SINK)  
3.EMITTER  
Base current  
I
1.5  
A
B
Collector power dissipation (Tc=25°C)  
Junction temperature  
Storage temperature range  
P
150  
W
°C  
°C  
C
T
150  
j
JEDEC  
T
stg  
55 to 150  
JEITA  
TOSHIBA  
2-21F1A  
Weight: 9.75 g (typ)  
Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-07-13  

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