TTC5200(Q)

更新时间： 2024-11-26 13:15:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
5页	190K
描述
Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PL

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中文翻译

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技术参数
数据手册

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TTC5200(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	2.09	Samacsys Confidence：	3
Samacsys Status：	Released	Samacsys PartID：	847453
Samacsys Pin Count：	3	Samacsys Part Category：	Transistor BJT NPN
Samacsys Package Category：	Transistor Outline, Vertical	Samacsys Footprint Name：	TO-3P(L)
Samacsys Released Date：	2019-07-08 09:41:08	Is Samacsys：	N
Base Number Matches：	1

TTC5200(Q) 数据手册

TTC5200

TOSHIBA Transistor Silicon NPN Triple Diffused Type

TTC5200

○Power Amplifier Applications

Unit: mm

•

High collector voltage: V

= 230 V (min)

CEO

Complementary to TTA1943

Recommended for 100-W high-fidelity audio frequency amplifier output

stage.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

230

Collector-emitter voltage

Emitter-base voltage

Collector current

1.BASE

2.COLLECTOR(HEAT SINK)

3.EMITTER

Base current

1.5

Collector power dissipation (Tc=25°C)

Junction temperature

Storage temperature range

150

°C

150

JEDEC

―

stg

−55 to 150

JEITA

TOSHIBA

2-21F1A

Weight: 9.75 g (typ)

Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-07-13

12 3 4 5

中文翻译

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