Datasheet > TTC5460B

TTC5460B

更新时间： 2024-11-27 14:57:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	158K
描述
NPN Bipolar Transistor, 800 V, 0.05 A, TO-126N

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TTC5460B 数据手册

TTC5460B

Bipolar Transistors Silicon NPN Triple-Diffused Type

TTC5460B

1. Applications

•

Dynamic Focus

High-Voltage Switching

High-Voltage Amplifiers

2. Features

(1) High collector voltage : VCEO = 800 V

3. Packaging and Internal Circuit (Note)

1. Emitter

2. Collector

3. Base

TO-126N

Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation

voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical

isolation from surrounding parts.

Start of commercial production

2014-02

2016-02-05

Rev.1.0

12 3 4 5 6 7

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