Datasheet > TSR50AA60

TSR50AA60

更新时间： 2024-09-15 21:54:23

品牌	Logo	应用领域
SANREX		三端双向交流开关
页数	文件大小	规格书
1页	65K
描述
TRIAC (ISOLATED TYPE) TO-240 PACKAGE

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中文翻译

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技术参数
数据手册

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TSR50AA60 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

TSR50AA60 数据手册

SanRex

TRIAC (ISOLATED TYPE) TO-240 PACKAGE

TSR50AA40/60

I_T(RMS)= 50A, V_DRM= 400/600V

SanRex Triac TSR50AA40/60 is designed for full-wave AC

control applications. It can be used as an ON/OFF function or

for phase control operations.

Features

* Glass-passivated junctions Features

* High Surge Current

* UL registered E76102

Typical Applications

* Heater Control

* Motor Control

* Lighting Control

< Maximum Ratings >

(Tj = 25^°C Unless Otherwise Specified)

Ratings

Symbol

Item

Unit

TSR50AA40

TSR50AA60

600

V_DRM

V_DSM

Repetitive Peak Off-state Voltage

400

Non-Repetitive Peak Off-state Voltage

450

650

Symbol

I _T(RMS)

I _TSM

I ²t

Item

R.M.S. On-state Current

Surge On-state Current

I ²t (for fusing)

Conditions

Ratings

Unit

T _C= 94°C

One cycle, 50Hz/60Hz, Peak, non-repetitive

Value for one cycle surge current

730/800

2660

A²s

P_GM

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

P_G(AV)

I _GM

V_{G M}

di/dt

Peak Gate Voltage

Critical Rate of Rise of On-state Current

Operation Junction Temperature

Storage Temperature

I _G=100mA V_D=1/2V _DRMdi/dt=1A/Fs

A/Fs

°C

-40 to +125

2500

2.7(28)

170

T _{s t g}

Isolation Breakdown Voltage

A.C. 1 minute

ISO

Mounting M5

Terminals M5

Recommended Value 1.5 to 2.5 (15 to 25)

Recommended Value1.5 to 2.5 (15 to 25)

Typical Value

Mounting

Torque

N*m

(kg * cm)

Mass

< Electrical Characteristics >

Symbol

(Tj = 25^°C Unless Otherwise Specified)

Ratings

Typ.

Item

Conditions

Unit

Min.

Max.

I _DRM

V_TM

Repetitive Peak Off-state Current

T = 125°C, V_D= V_DRM

Peak On-State Voltage

I _T= 70A

1.3

I _GT1⁺

V_D= 6V, I _T= 1A

I _GT1^-

QII

QIV

Gate Trigger Current

I _GT3⁺

I _GT3^-

QIII

QII

V_D= 6V, I _T= 1A

V_GT1⁺

V_GT1^-

V_GT3⁺

V_GT3^-

Gate Trigger Voltage

QIV

QIII

V_D= 6V, I _T= 1A

V_{G D}

Non-Trigger Gate Voltage

Tj = 125^°C, V_D=1/2V_DRM

Tj = 125^°C, V_D=2/3V_DRM, exp. Wave

0.2

dv/dt

Critical Rate of Rise of Off-State Voltage

V/Fs

Critical Rate of Rise of Commutation

Voltage

(dv/dt)c

Tj = 125^°C, V_D=2/3V_DRM(di/dt)c=8A/ms

V/Fs

I _H

Holding Current

100

R _th(j-c)

Thermal Resistance

Junction to case

0.55

°C/W

____________________________________________________________________________________________________________________________________

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516) 625-1313 FAX(516) 625-8845 E-mail: semi@sanrex.com

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