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TSM3N80CHC5G PDF预览

TSM3N80CHC5G

更新时间: 2024-10-29 01:08:07
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TSC /
页数 文件大小 规格书
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描述
800V N-Channel Power MOSFET

TSM3N80CHC5G 数据手册

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TSM3N80  
800V N-Channel Power MOSFET  
Thermal Performance  
Parameter  
IPAK/DPAK ITO-220  
TO-220  
Symbol  
Unit  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
RӨ  
1.33  
110  
3.9  
1.33  
JC  
oC/W  
RӨ  
62.5  
JA  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
Drain-Source On-State Resistance  
Gate Threshold Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage  
Forward Transfer Conductance  
Dynamic  
VGS = 0V, ID = 250uA  
VGS = 10V, ID = 1.5A  
VDS = VGS, ID = 250uA  
VDS = 800V, VGS = 0V  
VGS = ±30V, VDS = 0V  
VDS = 30V, ID = 1.5A  
BVDSS  
RDS(ON)  
VGS(TH)  
IDSS  
800  
--  
--  
3.3  
--  
--  
4.2  
4
V
2
V
--  
--  
10  
uA  
nA  
S
IGSS  
--  
--  
±100  
--  
gfs  
--  
3.7  
Total Gate Charge  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
19  
4
--  
--  
--  
--  
--  
--  
VDS = 640V, ID = 3A,  
VGS = 10V  
nC  
pF  
Gate-Source Charge  
Gate-Drain Charge  
(Note 4,5)  
7.6  
696  
65  
Input Capacitance  
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching  
10.2  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
48  
36  
--  
--  
--  
--  
VGS = 10V, ID = 3A,  
VDD = 400V, RG =25Ω  
(Note 4,5)  
nS  
106  
41  
Source-Drain Diode Ratings and Characteristic  
Source Current  
Integral reverse diode in  
IS  
ISM  
VSD  
tfr  
--  
--  
--  
--  
--  
--  
--  
3
12  
1.5  
--  
A
A
the MOSFET  
Source Current (Pulse)  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IS = 3A, VGS = 0V  
VGS = 0V, IS =3A,  
dIF/dt = 100A/us  
--  
V
370  
1.8  
nS  
uC  
Qfr  
--  
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  
Note 2: VDD = 50V, IAS=3A, L=59mH, RG =25, Starting TJ=25ºC  
Note 3: ISD4A, di/dt200A/uS, VDDBVDSS, Starting TJ=25ºC  
Note 4: Pulse test: pulse width 300uS, duty cycle 2%  
Note 5: Essentially Independent of Operating Temperature  
2/12  
Version: B12  

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