TSM3N80
800V N-Channel Power MOSFET
Thermal Performance
Parameter
IPAK/DPAK ITO-220
TO-220
Symbol
Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨ
1.33
110
3.9
1.33
JC
oC/W
RӨ
62.5
JA
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transfer Conductance
Dynamic
VGS = 0V, ID = 250uA
VGS = 10V, ID = 1.5A
VDS = VGS, ID = 250uA
VDS = 800V, VGS = 0V
VGS = ±30V, VDS = 0V
VDS = 30V, ID = 1.5A
BVDSS
RDS(ON)
VGS(TH)
IDSS
800
--
--
3.3
--
--
4.2
4
V
Ω
2
V
--
--
10
uA
nA
S
IGSS
--
--
±100
--
gfs
--
3.7
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
19
4
--
--
--
--
--
--
VDS = 640V, ID = 3A,
VGS = 10V
nC
pF
Gate-Source Charge
Gate-Drain Charge
(Note 4,5)
7.6
696
65
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching
10.2
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
48
36
--
--
--
--
VGS = 10V, ID = 3A,
VDD = 400V, RG =25Ω
(Note 4,5)
nS
106
41
Source-Drain Diode Ratings and Characteristic
Source Current
Integral reverse diode in
IS
ISM
VSD
tfr
--
--
--
--
--
--
--
3
12
1.5
--
A
A
the MOSFET
Source Current (Pulse)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = 3A, VGS = 0V
VGS = 0V, IS =3A,
dIF/dt = 100A/us
--
V
370
1.8
nS
uC
Qfr
--
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=3A, L=59mH, RG =25Ω, Starting TJ=25ºC
Note 3: ISD≤4A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC
Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 5: Essentially Independent of Operating Temperature
2/12
Version: B12