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TSM40N03PQ33 PDF预览

TSM40N03PQ33

更新时间: 2024-10-28 12:01:55
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
4页 107K
描述
30V N-Channel Power MOSFET

TSM40N03PQ33 数据手册

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TSM40N03PQ33  
30V N-Channel Power MOSFET  
PDFN33  
PRODUCT SUMMARY  
Pin Definition:  
1. Source  
2. Source  
3. Source  
4. Gate  
8. Drain  
VDS (V)  
RDS(on)(m)  
4.6 @ VGS =10V  
5.9 @ VGS =4.5V  
ID (A)  
19  
7. Drain  
6. Drain  
5. Drain  
30  
16  
Features  
Block Diagram  
Advanced Trench Technology  
Low On-Resistance  
Low gate charge typical @ 12nC (Typ.)  
Low Crss typical @ 140pF (Typ.)  
Ordering Information  
Part No.  
Package  
Packing  
TSM40N03PQ33 RGG  
PDFN33  
5Kpcs / 13” Reel  
Note: “G” denote for Halogen Free Product  
N-Channel MOSFET  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
TC=25°C  
VDS  
VGS  
30  
±20  
V
40  
TC=70°C  
40  
Continuous Drain Current  
TA=25°C  
ID  
A
25  
TA=70°C  
Drain Current-Pulsed Note 1  
Avalanche Current, L=0.5mH  
Avalanche Energy, L=0.5mH  
TC=25°C  
20  
IDM  
100  
A
A
IAS, IAR  
EAS, EAR  
38  
72  
52  
mJ  
TC=70°C  
Maximum Power Dissipation  
33  
PD  
W
TA=25°C  
3.8  
TA=70°C  
Storage Temperature Range  
2.4  
TSTG  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature Range  
* Limited by maximum junction temperature  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
2.4  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
Notes: Surface mounted on FR4 board t 10sec  
RӨJA  
33  
1/4  
Version: A12  

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