TSM3N90
900V N-Channel Power MOSFET
TO-220
ITO-220
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
VDS (V)
RDS(on)(Ω)
ID (A)
3. Source
900
5.1 @ VGS =10V
1.5
General Description
The TSM3N90 N-Channel Power MOSFET is
produced by new advance planar process. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
TO-251
(IPAK)
TO-252
(DPAK)
Block Diagram
Features
●
●
●
Low RDS(ON) 4.3Ω (Typ.)
Low gate charge typical @ 17nC (Typ.)
Low Crss typical @ 8.7pF (Typ.)
Ordering Information
Part No.
Package
Packing
75pcs / Tube
TSM3N90CH C5G
TSM3N90CP ROG
TSM3N90CZ C0
TSM3N90CI C0
TO-251
TO-252
TO-220
ITO-220
2.5Kpcs / 13” Reel
50pcs / Tube
N-Channel MOSFET
50pcs / Tube
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Limit
ITO-220
900
Parameter
Symbol
Unit
IPAK/DPAK
TO-220
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
V
±30
Tc = 25ºC
2.5
A
Continuous Drain Current
ID
Tc = 100ºC
1.6
A
Pulsed Drain Current *
IDM
EAS
IAR
10
A
Single Pulse Avalanche Energy (Note 2)
Avalanche Current (Repetitive) (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @ TC = 25oC
16.6
2.5
mJ
A
EAR
dv/dt
PTOT
TJ
9.4
mJ
V/ns
W
ºC
oC
4.5
94
32
94
Operating Junction Temperature
150
Storage Temperature Range
TSTG
-55 to +150
Note: Limited by maximum junction temperature
1/12
Version: A12