Datasheet > TSM3N90

TSM3N90

更新时间： 2024-01-11 01:41:22

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
12页	531K
描述
900V N-Channel Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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TSM3N90 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.69	Is Samacsys：	N
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

TSM3N90 数据手册

TSM3N90

900V N-Channel Power MOSFET

Thermal Performance

Parameter

IPAK/DPAK ITO-220

TO-220

Symbol

Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

RӨ

1.33

110

1.33

3.9

^oC/W

RӨ

62.5

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

Drain-Source On-State Resistance

Gate Threshold Voltage

Ω

V_GS= 0V, I_D= 250uA

V_GS= 10V, I_D= 1.25A

V_DS= V_GS, I_D= 250uA

V_DS= 900V, V_GS= 0V

V_GS= ±30V, V_DS= 0V

BV_DSS

R_DS(ON)

V_GS(TH)

I_DSS

900

4.3

5.1

4.0

2.0

Zero Gate Voltage Drain Current

Gate Body Leakage

Forward Transfer Conductance

Dynamic

I_GSS

±100

V_DS= 30V, I_D= 1.25A

g_fs

Total Gate Charge

Q_g

Q_gs

Q_gd

C_iss

C_oss

C_rss

2.4

6.6

748

V_DS= 720V, I_D= 2.5A,

_GS= 10V

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching

8.7

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10V, I_D= 2.5A,

V_DD= 450V, R_G= 25Ω

Source-Drain Diode Ratings and Characteristic

Source Current

Integral reverse diode in

I_S

I_SM

V_SD

t_fr

2.5

1.5

the MOSFET

Source Current (Pulse)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I_S= 2.5A, V_GS= 0V

V_GS= 0V, I_S=2.5A,

dI_F/dt = 100A/us

355

1.8

Q_fr

Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

Note 2: V_DD= 50V, I_AS=2.5A, L=5mH, R_G=25Ω, Starting T_J=25ºC

Note 3: I_SD≤2.5A, di/dt≤200A/uS, V_DD≤BV_DSS, Starting T_J=25ºC

Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2%

Note 5: Essentially Independent of Operating Temperature

2/12

Version: A12

123 4 5 6 7...12

中文翻译

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