TSHA5500, TSHA5501, TSHA5502, TSHA5503
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = 2ꢀ°
• Low forward voltage
9ꢀ 8390
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION
The TSHA550. series are infrared, 875 nm emitting diodes in
GaAlAs on GaAlAs technology, molded in a clear, untinted
plastic package.
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
TSHA5500
TSHA5501
TSHA5502
TSHA5503
Ie (mW/sr)
ϕ (deg)
2ꢀ
λ
P (nm)
875
tr (ns)
600
20
25
30
35
2ꢀ
875
600
2ꢀ
875
600
2ꢀ
875
600
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSHA5500
Bulk
Bulk
Bulk
Bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
T-1¾
T-1¾
T-1¾
T-1¾
TSHA5501
TSHA5502
TSHA5503
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
V
mA
mA
A
Forward current
100
200
2.5
180
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
mW
www.vishay.com
156
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81020
Rev. 1.5, 05-Sep-08