Datasheet > TSHA5501-CS12

TSHA5501-CS12

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		半导体
页数	文件大小	规格书
6页	113K
描述
Infrared LED, 875nm

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中文翻译

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技术参数
数据手册

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TSHA5501-CS12 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.67
最大正向电流：	0.1 A	最大正向电压：	1.8 V
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	100 °C
最低工作温度：	-55 °C	峰值波长：	875 nm
最大反向电压：	5 V	半导体材料：	GaAlAs
光谱带宽：	8e-8 m	子类别：	Infrared LEDs
表面贴装：	NO	视角：	48 deg
Base Number Matches：	1

TSHA5501-CS12 数据手册

TSHA550.

Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm,

GaAlAs Double Hetero

Description

The TSHA550. series are high efficiency infrared

emitting diodes in GaAlAs on GaAlAs technology,

molded in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs tech-

nology these high intensity emitters feature about

70 % radiant power improvement.

94 8390

Features

Applications

• Extra high radiant power

• Infrared remote control and free air transmission

systems with high power and comfortable radia-

tion angle requirements in combination with PIN

photodiodes or phototransistors.

• Because of the reduced radiance absorption in

glass at the wavelength of 875 nm, this emitter

series is also suitable for systems with panes in

the transmission range between emitter and

detector.

• Suitable for high pulse current operation

• Standard T-1¾ (∅ 5 mm) package

• Angle of half intensity ϕ = 24ꢀ

• Peak wavelength λ = 875 nm

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Absolute Maximum Ratings

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Reverse voltage

Test condition

Symbol

V_R

Value

Unit

100

I_F

I_FM

I_FSM

P_V

Forward current

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

Peak forward current

Surge forward current

Power dissipation

200

2.5

210

ꢀC

T_j

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

100

T_amb

T_stg

T_sd

- 55 to + 100

260

ꢀC

t ≤ 5 sec, 2 mm from case

ꢀC

Thermal resistance junction/

ambient

R_thJA

350

K/W

Document Number 81020

Rev. 1.4, 28-Nov-06

www.vishay.com

12 3 4 5 6

中文翻译

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型号	品牌	获取价格	描述	数据表
TSHA5501CS12Z	VISHAY	获取价格	Infrared LED, 5mm, 1-Element, 875nm
TSHA5501-CS21	VISHAY	获取价格	Infrared LED, 875nm
TSHA5501-CSZ	VISHAY	获取价格	暂无描述
TSHA5501-ES12	VISHAY	获取价格	Infrared LED, 875nm
TSHA5501-ESZ	VISHAY	获取价格	Infrared LED, 875nm
TSHA5502	VISHAY	获取价格	GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
TSHA5502AS12	VISHAY	获取价格	Infrared LED, 5mm, 1-Element, 875nm,
TSHA5502-AS12	VISHAY	获取价格	Infrared LED, 875nm
TSHA5502AS12Z	VISHAY	获取价格	Infrared LED, 5mm, 1-Element, 875nm,
TSHA5502AS21	VISHAY	获取价格	Infrared LED, 5mm, 1-Element, 875nm,