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TSHA5501-ESZ

更新时间： 2024-01-15 21:08:35

品牌	Logo	应用领域
威世 - VISHAY		半导体红外LED 光电二极管
页数	文件大小	规格书
6页	91K
描述
Infrared LED, 875nm

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中文翻译

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技术参数
数据手册

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TSHA5501-ESZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.67
最大正向电流：	0.1 A	最大正向电压：	1.8 V
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	100 °C
最低工作温度：	-55 °C	峰值波长：	875 nm
最大反向电压：	5 V	半导体材料：	GaAlAs
光谱带宽：	8e-8 m	子类别：	Infrared LEDs
表面贴装：	NO	视角：	48 deg
Base Number Matches：	1

TSHA5501-ESZ 数据手册

TSHA550.

Vishay Telefunken

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1 )

Package

Description

94 8390

The TSHA550. series are high efficiency infrared emit-

ting diodes in GaAlAs on GaAlAs technology, molded

in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs

technology these high intensity emitters feature about

70 % radiant power improvement.

Features

Extra high radiant power

Suitable for high pulse current operation

Standard T–1 (ø 5 mm) package

Angle of half intensity ϕ = ± 24

Peak wavelength = 875 nm

High reliability

Good spectral matching to Si photodetectors

Applications

Infrared remote control and free air transmission systems with high power and comfortable radiation angle re-

quirements in combination with PIN photodiodes or phototransistors.

Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also

suitable for systems with panes in the transmission range between emitter and detector.

Absolute Maximum Ratings

amb

= 25 C

Parameter

Reverse Voltage

Test Conditions

Symbol

Value

Unit

Forward Current

100

200

2.5

210

K/W

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

t /T = 0.5, t = 100 s

t = 100 s

FSM

100

–55...+100

260

amb

stg

5sec, 2 mm from case

350

thJA

Document Number 81020

Rev. 2, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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