Datasheet > TSHA5502-CSZ

TSHA5502-CSZ

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	113K
描述
Infrared LED, 875nm

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TSHA5502-CSZ 数据手册

TSHA550.

Vishay Semiconductors

High Speed Infrared Emitting Diode, 870 nm,

GaAlAs Double Hetero

Description

The TSHA550. series are high efficiency infrared

emitting diodes in GaAlAs on GaAlAs technology,

molded in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs tech-

nology these high intensity emitters feature about

70 % radiant power improvement.

94 8390

Features

Applications

• Extra high radiant power

• Infrared remote control and free air transmission

systems with high power and comfortable radia-

tion angle requirements in combination with PIN

photodiodes or phototransistors.

• Because of the reduced radiance absorption in

glass at the wavelength of 875 nm, this emitter

series is also suitable for systems with panes in

the transmission range between emitter and

detector.

• Suitable for high pulse current operation

• Standard T-1¾ (∅ 5 mm) package

• Angle of half intensity ϕ = 24ꢀ

• Peak wavelength λ = 875 nm

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Absolute Maximum Ratings

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Reverse voltage

Test condition

Symbol

V_R

Value

Unit

100

I_F

I_FM

I_FSM

P_V

Forward current

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

Peak forward current

Surge forward current

Power dissipation

200

2.5

210

ꢀC

T_j

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

100

T_amb

T_stg

T_sd

- 55 to + 100

260

ꢀC

t ≤ 5 sec, 2 mm from case

ꢀC

Thermal resistance junction/

ambient

R_thJA

350

K/W

Document Number 81020

Rev. 1.4, 28-Nov-06

www.vishay.com

12 3 4 5 6

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