TSHA5500
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = 2ꢀ4
• Low forward voltage
9ꢀ 8390
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
The TSHA5500 is an infrared, 875 nm emitting diode in
GaAlAs on GaAlAs technology, molded in a clear, untinted
plastic package.
• Halogen-free according to IEC 612ꢀ9-2-21 definition
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSHA5500
30
2ꢀ
875
600
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
Bulk
REMARKS
PACKAGE FORM
TSHA5500
MOQ: ꢀ000 pcs, ꢀ000 pcs/bulk
T-1¾
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
IF
5
100
V
mA
mA
A
Forward current
Peak forward current
tp/T = 0.5, tp = 100 µs
tp = 100 µs
IFM
IFSM
PV
200
Surge forward current
Power dissipation
2.5
180
mW
4C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Tj
100
Tamb
Tstg
Tsd
- ꢀ0 to + 85
- ꢀ0 to + 100
260
4C
4C
t ≤ 5 s, 2 mm from case
4C
Thermal resistance junction/ambient
Note
amb = 25 4C, unless otherwise specified
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
T
Document Number: 81020
Rev. 1.8, 08-Oct-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
1