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TRF6900PT PDF预览

TRF6900PT

更新时间: 2024-10-28 23:37:35
品牌 Logo 应用领域
德州仪器 - TI 电信集成电路蜂窝电话电路电信电路
页数 文件大小 规格书
34页 485K
描述
RF Modulator/Demodulator

TRF6900PT 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:PLASTIC, LQFP-48针数:48
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.73
Is Samacsys:NJESD-30 代码:S-PQFP-G48
长度:7 mm功能数量:1
端子数量:48最高工作温度:60 °C
最低工作温度:-20 °C封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP48,.35SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.2/3.6 V
认证状态:Not Qualified座面最大高度:1.6 mm
子类别:Other Telecom ICs表面贴装:YES
技术:CMOS电信集成电路类型:RF AND BASEBAND CIRCUIT
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7 mm
Base Number Matches:1

TRF6900PT 数据手册

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TRF6900  
SINGLE-CHIP RF TRANSCEIVER  
SLAS213C – SEPTEMBER 1999 – REVISED MAY 2000  
Single-Chip RF Transceiver for 868 MHz  
and 915 MHz ISM Bands  
Typical Output Power of 4.5 dBm  
Typical Output Frequency Resolution of  
230 Hz  
850 MHz to 950 MHz Operation  
FM/FSK Operation for Transmit and  
Receive  
Ultrafast Lock Times From DDS  
Implementation  
24-Bit Direct Digital Synthesizer (DDS) With  
11-Bit DAC  
Two Fully Programmable Operational  
Modes  
On-Chip VCO and PLL  
2.2 V to 3.6 V Operation  
On-Chip Reference Oscillator  
Minimal External Components Required  
Low Power Consumption  
Fast Radio Strength Signal Indicator (RSSI)  
Flexible Serial Interface to TI MSP430  
Microcontroller  
48-Pin Low Profile Plastic Quad Flat  
Package (PQFP)  
PQFP PACKAGE  
(TOP VIEW)  
48 47 46 45 44 43 42 41 40 39 38 37  
LNA_GND  
LNA_IN  
DEM_VCC  
DEM_TANK  
DEM_TANK  
RSSI_OUT  
AMP_IN  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
1
2
LNA_GND  
PA_VCC  
PA_OUT  
PA_GND  
PLL_GND  
PD_SET  
3
4
5
AMP_CAP  
AMP_OUT  
S&H_CAP  
DATA_OUT  
DATA  
6
7
8
9
PD_OUT2  
PD_OUT1  
LOCKDET  
PLL_VCC  
10  
11  
12  
CLOCK  
STROBE  
13 14 15 16 17 18 19 20 21 22 23 24  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TRF6900PT 替代型号

型号 品牌 替代类型 描述 数据表
TRF6900APTR TI

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