TRF7003PKR

更新时间： 2024-11-19 13:02:11

品牌	Logo	应用领域
德州仪器 - TI		放大器功率放大器
页数	文件大小	规格书
8页	137K
描述
Silicon RFMOS Discrete Transistor 3-SOT-89

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技术参数
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TRF7003PKR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	not_compliant	风险等级：	5.92
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

TRF7003PKR 数据手册

TRF7003

MOSFET POWER AMPLIFIER

SLWS058C – APRIL 1997 – REVISED JULY 1998

PK PACKAGE

(TOP VIEW)

Wide Operating Frequency Range up to

1000 MHz

High Output Power:

– Typical Value of 32 dBm at 4.8 V and 900

MHz

– Typical Value of 29 dBm at 3.6 V and

900 MHz

High Gain:

– Typical Value of 9 dB at 4.8 V and

900 MHz at 32-dBm Output Power

High Power-Added Efficiency (PAE):

– Typical Value of 50% at 32-dBm Output

Power

Low Cost

Extremely Rugged:

– Sustains 20:1 Load Mismatch

Suitable for Various Wireless Applications

Low Leakage Current <1 A

SOT-89 Plastic Power Package

1000 V Human Body Model ESD Protection

on Gate and Drain

description

The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET)

manufactured using the Texas Instruments RFMOS process. It is housed in a SOT-89 (PK) plastic power

package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global

systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost

device, operates from a single-polarity positive power supply and has low leakage current. Typical power output

at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

RFMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7 8

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