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TRF7610

更新时间： 2024-11-22 22:22:11
品牌 Logo 应用领域
德州仪器 - TI 放大器功率放大器GSM
页数 文件大小 规格书
11页 162K
描述
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

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中文翻译

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TRF7610 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84增益：30 dB
最大输入功率 (CW)：13 dBm最大工作频率：1000 MHz
最小工作频率：800 MHz最高工作温度：85 °C
最低工作温度：-40 °C射频/微波设备类型：WIDE BAND HIGH POWER
Base Number Matches：1

TRF7610 数据手册

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TRF7610  
SILICON MOSFET POWER AMPLIFIER IC FOR GSM  
SLWS059B – MAY 1997 – REVISED AUGUST 1998  
PWP PACKAGE  
(TOP VIEW)  
Single Positive Power Supply (No Negative  
Voltage Required)  
Advanced Silicon RFMOS Technology  
4.8-V Operation for GSM Applications  
35-dBm Typical Output Power  
30-dB Typical Power Gain  
1
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
VG2  
VG3  
VPC  
VG1  
NC  
RFIN  
RFIN  
NC  
VG1  
VPC  
VG3  
VG2  
VD1/VD2  
GND  
2
3
RFOUT/VD3  
RFOUT/VD3  
RFOUT/VD3  
RFOUT/VD3  
RFOUT/VD3  
RFOUT/VD3  
RFOUT/VD3  
RFOUT/VD3  
GND  
4
5
40% Typical PAE with 5-dBm Input Power  
45% Typical PAE with 8-dBm Input Power  
Output Power Control  
6
7
8
9
Few External Components Required for  
Operation  
10  
11  
12  
VD1/VD2  
Thermally Enhanced Surface-Mount  
Package for Small Circuit Footprint  
Rugged, Sustains 20:1 Load Mismatch  
NC – No internal connection  
800-MHz to 1000-MHz Wide Operational  
Frequency Range  
Low Standby Current (<10 µA)  
description  
The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global  
systems for mobile communications (GSM). It uses Texas Instruments RFMOS process and consists of a  
three-stage amplifier with output power control. Few external components are required for operation.  
The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section  
of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF  
output port, RFOUT, require simple external matching networks.  
A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious  
emission specifications for time-division multiple-access (TDMA) systems. The power control signal causes a  
change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power  
applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of  
–43 dBm at VPC = 0 V to a typical value of 35 dBm at VPC = 3 V. Forward isolation with the RF input power  
applied to RFIN at 5 dBm, VPC = 0 V, is typically 48 dB.  
The TRF7610 is available in a thermally enhanced, surface-mount, 24-pin PowerPAD (PWP) thin-shrink  
small-outline package (TSSOP). It is characterized for operation from –40°C to 85°C operating free-air  
temperature. In order to maintain acceptable thermal operating conditions, the device should be operated in  
pulse applications such as the GSM standard 1/8 duty cycle. The package has a solderable pad that improves  
the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a  
low-inductance electrical path to ground and must be electrically connected to the printed circuit-board (PCB)  
ground plane as a continuation of the regular package terminals that are designated GND.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
RFMOS and PowerPAD are trademarks of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...11

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