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TR25

更新时间: 2024-09-16 22:42:03
品牌 Logo 应用领域
TRSYS 可控硅三端双向交流开关
页数 文件大小 规格书
3页 337K
描述
SILICON TRIACS

TR25 数据手册

 浏览型号TR25的Datasheet PDF文件第2页浏览型号TR25的Datasheet PDF文件第3页 
TR2.5 SERIES  
SILICON TRIACS  
l
l
l
l
l
Sensitive Gate Triacs  
2.5 A RMS  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
400 V to 800 V Off-State Voltage  
MT1  
MT2  
G
1
2
3
Max I of 5 mA (Quadrant 1)  
GT  
Pin 2 is in electrical contact with the mounting base.  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TR2.5-400-14  
TR2.5-600-14  
TR2.5-700-14  
TR2.5-800-14  
400  
600  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
700  
800  
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)  
Peak on-state surge current full-sine-wave (see Note 3)  
Peak on-state surge current half-sine-wave (see Note 4)  
Peak gate current  
IT(RMS)  
ITSM  
ITSM  
IGM  
2.5  
A
A
12  
14  
A
±0.2  
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s)  
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)  
Operating case temperature range  
PGM  
PG(AV)  
TC  
1.3  
W
W
°C  
°C  
°C  
0.3  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 1.6 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.  
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at  
the rate of 100 mA/°C.  
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.  
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.  
5. This value applies for a maximum averaging time of 20 ms.  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
MIN  
TYP  
MAX  
PARAMETER  
TEST CONDITIONS  
UNIT  
Repetitive peak  
off-state current  
IDRM  
VD = rated VDRM  
supply = +12 V†  
IG = 0  
TC = 110°C  
±1  
mA  
V
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
RL = 10 W  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
tp(g) > 20 m s  
5
Peak gate trigger  
current  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
-8  
IGTM  
mA  
V
-10  
25  
Vsupply = +12 V†  
0.9  
-1.2  
-1.2  
1.2  
2.5  
-2.5  
-2.5  
Peak gate trigger  
voltage  
Vsupply = +12 V†  
Vsupply = -12 V†  
Vsupply = -12 V†  
VGTM  
† All voltages are with respect to Main Terminal 1.  

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