Datasheet > TPW60R080M

TPW60R080M

更新时间： 2024-04-09 19:00:35

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
12页	1002K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPW60R080M 数据手册

TPA60R080M,TPV60R080M,TPW60R080M

Wuxi Unigroup Microelectronics Co.,Ltd

Electrical Characteristics T_J= 25ºC, unless otherwise noted

Value

Typ.

Parameter

Symbol

Test Conditions

Unit

Min.

Max.

Static Characteristics

Drain-Source Breakdown Voltage

V_(BR)DSS

V_GS= 0V, I_D= 250µA

V_DS= 600V, V_GS= 0V, T_J= 25ºC

V_DS= 600V, V_GS= 0V, T_J= 150ºC

V_GS= ±30V

600

Zero Gate Voltage Drain Current

I_DSS

μA

100

±100

4.5

Gate-Source Leakage Current

Gate-Source Threshold Voltage

I_GSS

V_GS(th)

V_DS= V_GS, I_D= 250µA

2.5

Drain-Source On-State-Resistance

R_DS(on)

R_G

V_GS= 10V, I_D= 24A

0.073

0.8

0.08

Ω

Gate Resistance

f = 1.0MHz open drain

Dynamic Characteristics

Input Capacitance

C_iss

C_oss

C_rss

Q_g

3488

140

V_GS= 0V,

V_DS= 100V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DD= 480V, I_D= 47A,

V_GS= 10V

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Q_gs

Q_gd

t_d(on)

t_r

85.8

110.2

55.8

V_DD= 400V, I_D= 47A,

R_G= 25Ω

t_d(off)

t_f

Drain-Source Body Diode Characteristics

Body Diode Forward Voltage

Reverse Recovery Time

V_SD

t_rr

T_J= 25ºC, I_SD= 47A, V_GS= 0V

0.9

400

1.2

μC

V_R= 400V, I_F= 20A,

di_F/dt = 100A/μs

Reverse Recovery Charge

Q_rr

I_rrm

Peak Reverse Recovery Current

39.8

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I_AS= 8.7A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

3. Identical low side and high side switch with identical R_G

V1.0

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