Datasheet > TPW65R040MD

TPW65R040MD

更新时间： 2024-04-09 19:00:03

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
8页	810K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPW65R040MD 数据手册

TPW65R040MD

Wuxi Unigroup Microelectronics Co.,Ltd

650V Super-junction Power MOSFET

Description

650V Super-junction Power MOSFET

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed according to the SJ

principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with

highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by

Wuxi Unigroup Microelectronics Company. TO-247-4L package provide an additional connection to the source (Kelvin connection),

and eliminate the effect of voltage drops over the source inductance, resulting faster switching transients, and better achievable

efficiency.

Features

Applications

l Very low FOM RDS(on)×Qg

l 100% avalanche tested

l Easy to use/drive due to better control of the gate

l Better efficiency

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply (UPS)

l Power Factor Correction (PFC)

l Charger

l RoHS compliant

l Server

TO-247-4L

Device Marking and Package Information

Device

Package

Marking

TPW65R040MD

TO-247-4L

65R040M

Key Performance Parameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Q_g,typ

Value

700

Unit

0.04

160

I_D

I_D,pulse

216

E_OSS@ 400V

Body Diode di_F/dt

19.71

500

μJ

A/μs

V1.0

www.tsinghuaicwx.com

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