TPSMP6.8A thru TPSMP43A
www.vishay.com
Vishay General Semiconductor
High Power Density Surface Mount PAR®
Transient Voltage Suppressors
FEATURES
eSMP® Series
• Junction
passivation
optimized
design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Uni-direction only
SMP (DO-220AA)
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Anode
Cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
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DESIGN SUPPORT TOOLS
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Protection for ICs, drive transistors, signal lines of sensor
units, and electronic units in consumer, computer,
industrial, and automotive applications.
VBR
6.8 V to 43 V
VWM
5.8 V to 36.8 V
250 W
P
PPM (for VBR 6.8 V)
MECHANICAL DATA
PPPM (for VBR 7.5 V to 12 V)
300 W
P
PPM (for VBR 13 V to 43 V)
400 W
Case: SMP (DO-220AA)
Molding compound meets UL 94 V-0 flammability rating
PD
2.5 W
Base P/NHM3_X
AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)
- halogen-free, RoHS-compliant and
IFSM
40 A
TJ max.
Polarity
Package
185 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Uni-directional
SMP (DO-220AA)
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
Power dissipation on infinite heatsink, TA = 75 °C
SYMBOL
PPPM
IPPM
VALUE
See table next page
See table next page
2.5
UNIT
W
A
PD
W
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
40
A
Maximum instantaneous forward voltage at 25 A (3)
VF
2.5
V
Operating junction and storage temperature range
TJ, TSTG
-65 to +185
°C
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 10-Aug-2018
Document Number: 88471
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000