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TPSMP30-E3/85A PDF预览

TPSMP30-E3/85A

更新时间: 2024-09-25 21:13:43
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 361K
描述
Trans Voltage Suppressor Diode, 24.3V V(RWM), Unidirectional,

TPSMP30-E3/85A 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Is Samacsys:N击穿电压标称值:30 V
最大钳位电压:43.5 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3湿度敏感等级:1
极性:UNIDIRECTIONAL最大重复峰值反向电压:24.3 V
子类别:Transient Suppressors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

TPSMP30-E3/85A 数据手册

 浏览型号TPSMP30-E3/85A的Datasheet PDF文件第2页浏览型号TPSMP30-E3/85A的Datasheet PDF文件第3页浏览型号TPSMP30-E3/85A的Datasheet PDF文件第4页浏览型号TPSMP30-E3/85A的Datasheet PDF文件第5页 
TPSMP6.8 thru TPSMP43A  
Vishay General Semiconductor  
New Product  
High Power Density Surface Mount Automotive  
Transient Voltage Suppressors  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Unidirection only  
• Exclusive patented PAR oxide passivated chip  
construction  
• Excellent clamping capability  
• Low incremental surge resistance  
DO-220AA (SMP)  
• Very fast response time  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
MAJOR RATINGS AND CHARACTERISTICS  
V(BR)  
6.8 V to 43 V  
250 W  
300 W  
400 W  
1.0 W  
TYPICAL APPLICATIONS  
PPPM (for V(BR) 6.8 V)  
PPM (for V(BR) 7.5 V - 12 V)  
Protection for Ics, drive transistors, signal lines of sensor  
units, and electronic units in consumer, computer,  
industrial and automotive applications.  
P
P
PPM (for V(BR) 13 V - 43 V)  
PD  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Epoxy meets UL-94V-0 flammability rating  
IFSM  
40 A  
TJ max.  
185 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C, unless otherwise specified)  
A
PARAMETER  
SYMBOL  
VALUE  
see table next page  
see table next page  
1.0  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1 & 3)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 1)  
Power dissipation on infinite heatsink, TA = 50 °C  
PPPM  
IPPM  
PD  
A
W
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
VF  
2.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 185  
°C  
Note:  
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal  
(3) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number 88937  
15-Feb-06  
www.vishay.com  
1

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