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TPSMP33AHE3/84A

更新时间： 2024-11-21 17:50:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 105K
描述
Trans Voltage Suppressor Diode, 28.2V V(RWM), Unidirectional,

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TPSMP33AHE3/84A 技术参数

是否Rohs认证：符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.81
Is Samacsys：N击穿电压标称值：33 V
最大钳位电压：45.7 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：e3湿度敏感等级：1
极性：UNIDIRECTIONAL最大重复峰值反向电压：28.2 V
子类别：Transient Suppressors表面贴装：YES
端子面层：Matte Tin (Sn)Base Number Matches：1

TPSMP33AHE3/84A 数据手册

 浏览型号TPSMP33AHE3/84A的Datasheet PDF文件第2页浏览型号TPSMP33AHE3/84A的Datasheet PDF文件第3页浏览型号TPSMP33AHE3/84A的Datasheet PDF文件第4页浏览型号TPSMP33AHE3/84A的Datasheet PDF文件第5页 
New Product  
TPSMP6.8 thru TPSMP43A  
Vishay General Semiconductor  
High Power Density Surface Mount Automotive  
Transient Voltage Suppressors  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Uni-direction only  
• Exclusive patented PAR oxide passivated  
chip construction  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
*Patent #'s  
4,980,315  
5,166,769  
5,278,094  
• Meets MSL level 1, per J-STD-020, LF maximum  
DO-220AA (SMP)  
peak of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Protection for Ics, drive transistors, signal lines of  
sensor units, and electronic units in consumer,  
computer, industrial and automotive applications.  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 43 V  
P
PPM (for VBR 6.8 V)  
250 W  
300 W  
400 W  
2.5 W  
40 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
PPPM (for VBR 7.5 V to 12 V)  
P
PPM (for VBR 13 V to 43 V)  
PD  
IFSM  
TJ max.  
185 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
See table next page  
See table next page  
2.5  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1 and 3)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 1)  
Power dissipation on infinite heatsink, TA = 75 °C  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
VF  
2.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 185  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal  
(3) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 88471  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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TPSMP33AHE3/84A 替代型号

型号 品牌 替代类型 描述 数据表
TPSMP33A-HE3/84A VISHAY

功能相似

 400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

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