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TPSMP33A-HE3/85A PDF预览

TPSMP33A-HE3/85A

更新时间: 2024-11-21 20:04:59
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 99K
描述
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

TPSMP33A-HE3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-220AA包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
风险等级:5.77其他特性:HIGH RELIABILITY
最大击穿电压:34.7 V最小击穿电压:31.4 V
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-220AAJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:2.5 W认证状态:Not Qualified
最大重复峰值反向电压:28.2 V表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

TPSMP33A-HE3/85A 数据手册

 浏览型号TPSMP33A-HE3/85A的Datasheet PDF文件第2页浏览型号TPSMP33A-HE3/85A的Datasheet PDF文件第3页浏览型号TPSMP33A-HE3/85A的Datasheet PDF文件第4页浏览型号TPSMP33A-HE3/85A的Datasheet PDF文件第5页 
New Product  
TPSMP6.8 thru TPSMP43A  
Vishay General Semiconductor  
High Power Density Surface Mount Automotive  
Transient Voltage Suppressors  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Uni-direction only  
• Exclusive patented PAR oxide passivated  
chip construction  
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
*Patent #'s  
4,980,315  
5,166,769  
5,278,094  
• Meets MSL level 1, per J-STD-020, LF maximum  
DO-220AA (SMP)  
peak of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Protection for Ics, drive transistors, signal lines of  
sensor units, and electronic units in consumer,  
computer, industrial and automotive applications.  
PRIMARY CHARACTERISTICS  
VBR  
6.8 V to 43 V  
P
PPM (for VBR 6.8 V)  
250 W  
300 W  
400 W  
2.5 W  
40 A  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
PPPM (for VBR 7.5 V to 12 V)  
P
PPM (for VBR 13 V to 43 V)  
PD  
IFSM  
TJ max.  
185 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
See table next page  
See table next page  
2.5  
UNIT  
W
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1 and 3)  
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 1)  
Power dissipation on infinite heatsink, TA = 75 °C  
A
PD  
W
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load  
IFSM  
40  
A
Maximum instantaneous forward voltage at 25 A (3)  
VF  
2.5  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 185  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal  
(3) Pulse test: 300 µs pulse width, 1 % duty cycle  
Document Number: 88471  
Revision: 21-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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