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TPSMC11HE3_B/H PDF预览

TPSMC11HE3_B/H

更新时间: 2024-11-10 07:31:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 88K
描述
Trans Voltage Suppressor Diode, 1500W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

TPSMC11HE3_B/H 数据手册

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TPSMC6.8 thru TPSMC47A  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction  
passivation  
optimized  
design  
passivated anisotropic rectifier technology  
• TJ = 185 °C capability suitable for high reliability  
and automotive requirement  
• Available in uni-directional polarity only  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform  
DO-214AB (SMC)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRIMARY CHARACTERISTICS  
• AEC-Q101 qualified  
VBR  
6.8 V to 47 V  
VWM  
5.50 V to 40.2 V  
1500 W  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PPPM  
IFSM  
200 A  
TJ max.  
Polarity  
Package  
185 °C  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ..., revision code only  
applicable for part number with 5 % tolerance)  
Uni-directional  
DO-214AB (SMC)  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) (1)(2)  
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)  
Peak forward surge current 8.3 ms single half sine-wave (2)(3)  
Maximum instantaneous forward voltage at 100 A (2)(3)  
Operating junction and storage temperature range  
See table next page  
200  
A
IFSM  
A
VF  
3.5  
V
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal  
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
(3)  
Revision: 22-Jul-16  
Document Number: 88407  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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