Datasheet > TPSMC12A-HE3/9AT

TPSMC12A-HE3/9AT

更新时间： 2024-11-27 19:07:55

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威世 - VISHAY		/
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数据手册

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TPSMC12A-HE3/9AT 数据手册

TPSMC6.8 thru TPSMC47A

Vishay General Semiconductor

Surface Mount PAR Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

• T = 185 °C capability suitable for high

reliability and automotive requirement

• Available in uni-directional polarity only

• 1500 W peak pulse power capability with a

10/1000 µs waveform

DO-214AB (SMC)

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

PRIMARY CHARACTERISTICS

• AEC-Q101 qualified

V_BR

P_PPM

I_FSM

6.8 V to 47 V

1500 W

200 A

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

T_Jmax.

185 °C

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability

rating

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

1500

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(fig. 3)

Peak power pulse current with a 10/1000 µs waveform ⁽¹⁾(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾⁽³⁾

Maximum instantaneous forward voltage at 100 A ⁽²⁾⁽³⁾

Operating junction and storage temperature range

See next table

200

I_FSM

V_F

3.5

T_J, T_STG

- 65 to + 185

°C

Notes

⁽¹⁾Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

⁽²⁾Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal

⁽³⁾Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

Document Number: 88407

Revision: 09-Feb-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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与TPSMC12A-HE3/9AT相关器件

型号	品牌	获取价格	描述	数据表
TPSMC12A-HE3/9T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLAST
TPSMC12AHE3_B/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, D
TPSMC12AHE3_B/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, D
TPSMC12A-VR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode,
TPSMC12CA	SUNMATE	获取价格	1500 Watts Surface Mount Transient Voltage Suppressor
TPSMC12CA-VR	LITTELFUSE	获取价格	TPSMC-VR系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件引起的瞬态电压
TPSMC12HE3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, D
TPSMC12-HE3/9T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, DO-214AB, PLAST
TPSMC12HE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, D
TPSMC13	EIC	获取价格	AUTOMOTIVE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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