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TPS28225DRBTG4 PDF预览

TPS28225DRBTG4

更新时间: 2024-11-20 15:54:59
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
38页 1383K
描述
BUF OR INV BASED MOSFET DRIVER, PDSO8, 3 X 3 MM, GREEN, PLASTIC, DFN-8

TPS28225DRBTG4 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DFN
包装说明:3 X 3 MM, GREEN, PLASTIC, DFN-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.36
Is Samacsys:N高边驱动器:YES
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:S-PDSO-N8
JESD-609代码:e4长度:3 mm
湿度敏感等级:2功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.12,25
封装形状:SQUARE封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:7.2 V
认证状态:Not Qualified座面最大高度:1 mm
子类别:MOSFET Drivers最大供电电压:8 V
最小供电电压:4.5 V标称供电电压:7.2 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
Base Number Matches:1

TPS28225DRBTG4 数据手册

 浏览型号TPS28225DRBTG4的Datasheet PDF文件第2页浏览型号TPS28225DRBTG4的Datasheet PDF文件第3页浏览型号TPS28225DRBTG4的Datasheet PDF文件第4页浏览型号TPS28225DRBTG4的Datasheet PDF文件第5页浏览型号TPS28225DRBTG4的Datasheet PDF文件第6页浏览型号TPS28225DRBTG4的Datasheet PDF文件第7页 
TPS28225  
TPS28226  
www.ti.com  
SLUS710C MAY 2006REVISED APRIL 2010  
High-Frequency 4-A Sink Synchronous MOSFET Drivers  
Check for Samples: TPS28225, TPS28226  
1
FEATURES  
DESCRIPTION  
Drives Two N-Channel MOSFETs with 14-ns  
Adaptive Dead Time  
The TPS28225 and TPS28226 are high-speed  
drivers for N-channel complimentary driven power  
MOSFETs with adaptive dead-time control. These  
drivers are optimized for use in variety of high-current  
one and multi-phase dc-to-dc converters. The  
Wide Gate Drive Voltage: 4.5 V Up to 8.8 V  
With Best Efficiency at 7 V to 8 V  
Wide Power System Train Input Voltage: 3 V  
Up to 27 V  
TPS28225/6 is  
a solution that provides highly  
Wide Input PWM Signals: 2.0 V up to 13.2-V  
Amplitude  
efficient, small size low EMI emmissions.  
The performance is achieved by up to 8.8-V gate  
drive voltage, 14-ns adaptive dead-time control, 14-ns  
propagation delays and high-current 2-A source and  
4-A sink drive capability. The 0.4-impedance for  
the lower gate driver holds the gate of power  
MOSFET below its threshold and ensures no  
shoot-through current at high dV/dt phase node  
transitions. The bootstrap capacitor charged by an  
internal diode allows use of N-channel MOSFETs in  
half-bridge configuration.  
Capable Drive MOSFETs with 40-A Current  
per Phase  
High Frequency Operation: 14-ns Propagation  
Delay and 10-ns Rise/Fall Time Allow FSW - 2  
MHz  
Capable Propagate <30-ns Input PWM Pulses  
Low-Side Driver Sink On-Resistance (0.4 )  
Prevents dV/dT Related Shoot-Through  
Current  
The TPS28225/6 features a 3-state PWM input  
compatible with all multi-phase controllers employing  
3-state output feature. As long as the input stays  
within 3-state window for the 250-ns hold-off time, the  
driver switches both outputs low. This shutdown  
mode prevents  
output-voltage.  
3-State PWM Input for Power Stage Shutdown  
Space Saving Enable (input) and Power Good  
(output) Signals on Same Pin  
Thermal Shutdown  
UVLO Protection  
a
load from the reversed-  
Internal Bootstrap Diode  
The other features include under voltage lockout,  
thermal shutdown and two-way enable/power good  
signal. Systems without 3-state featured controllers  
can use enable/power good input/output to hold both  
outputs low during shutting down.  
Economical SOIC-8 and Thermally Enhanced  
3-mm x 3-mm DFN-8 Packages  
High Performance Replacement for Popular  
3-State Input Drivers  
The TPS28225/6 is offered in an economical SOIC-8  
and thermally enhanced low-size Dual Flat No-Lead  
(DFN-8) packages. The driver is specified in the  
extended temperature range of –40°C to 125°C with  
the absolute maximum junction temperature 150°C.  
The TPS28226 operates in the same manner as the  
TPS28225/6 other than the input under voltage lock  
out. Unless otherwise stated all references to the  
TPS28225 apply to the TPS28226 also.  
APPLICATIONS  
Multi-Phase DC-to-DC Converters with Analog  
or Digital Control  
Desktop and Server VRMs and EVRDs  
Portable/Notebook Regulators  
Synchronous Rectification for Isolated Power  
Supplies  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
UNLESS OTHERWISE NOTED this document contains  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006–2010, Texas Instruments Incorporated  

TPS28225DRBTG4 替代型号

型号 品牌 替代类型 描述 数据表
TPS28225DRBRG4 TI

完全替代

8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125
TPS28225DRBR TI

完全替代

High-Frequency 4-A Sink Synchronous MOSFET Driver
TPS28225DRBT TI

类似代替

High-Frequency 4-A Sink Synchronous MOSFET Driver

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