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TPS28225DRBTG4 PDF预览

TPS28225DRBTG4

更新时间： 2024-01-23 20:22:18
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
38页 1383K
描述
BUF OR INV BASED MOSFET DRIVER, PDSO8, 3 X 3 MM, GREEN, PLASTIC, DFN-8

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TPS28225DRBTG4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：DFN
包装说明：3 X 3 MM, GREEN, PLASTIC, DFN-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.36
Is Samacsys：N高边驱动器：YES
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：S-PDSO-N8
JESD-609代码：e4长度：3 mm
湿度敏感等级：2功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装等效代码：SOLCC8,.12,25
封装形状：SQUARE封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）：260电源：7.2 V
认证状态：Not Qualified座面最大高度：1 mm
子类别：MOSFET Drivers最大供电电压：8 V
最小供电电压：4.5 V标称供电电压：7.2 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3 mm
Base Number Matches：1

TPS28225DRBTG4 数据手册

 浏览型号TPS28225DRBTG4的Datasheet PDF文件第2页浏览型号TPS28225DRBTG4的Datasheet PDF文件第3页浏览型号TPS28225DRBTG4的Datasheet PDF文件第4页浏览型号TPS28225DRBTG4的Datasheet PDF文件第6页浏览型号TPS28225DRBTG4的Datasheet PDF文件第7页浏览型号TPS28225DRBTG4的Datasheet PDF文件第8页 
TPS28225  
TPS28226  
www.ti.com  
SLUS710C –MAY 2006–REVISED APRIL 2010  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
(1) (2)  
TPS28225/6  
VALUE  
UNIT  
(3)  
Input supply voltage range, VDD  
–0.3 to 8.8  
–0.3 to 33  
Boot voltage, VBOOT  
DC  
Phase voltage, VPHASE  
–2 to 32 or VBOOT + 0.3 – VDD whichever is less  
–7 to 33.1 or VBOOT + 0.3 – VDD whichever is less  
–0.3 to 13.2  
Pulse < 400 ns, E = 20 mJ  
Input voltage range, VPWM, VEN/PG  
VPHASE – 0.3 to VBOOT + 0.3, (VBOOT – VPHASE < 8.8)  
V
Output voltage range, VUGATE  
Pulse < 100 ns, E = 2 mJ  
VPHASE – 2 to VBOOT + 0.3, (VBOOT – VPHASE < 8.8)  
–0.3 to VDD + 0.3  
Output voltage range, VLGATE  
Pulse < 100 ns, E = 2 mJ  
–2 to VDD + 0.3  
ESD rating, HBM  
2 k  
ESD rating, HBM ESD rating, CDM  
Continuous total power dissipation  
Operating virtual junction temperature range, TJ  
Operating ambient temperature range, TA  
Storage temperature, Tstg  
500  
See Dissipation Rating Table  
–40 to 150  
–40 to 125  
–65 to 150  
300  
°C  
Lead temperature (soldering, 10 sec.)  
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating  
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) These devices are sensitive to electrostatic discharge; follow proper device handling procedures.  
(3) All voltages are with respect to GND unless otherwise noted. Currents are positive into, negative out of the specified terminal. Consult  
Packaging Section of the Data book for thermal limitations and considerations of packages.  
DISSIPATION RATINGS(1)  
DERATING FACTOR  
ABOVE TA = 25°C  
TA < 25°C  
POWER RATING  
TA =70°C  
POWER RATING  
TA = 85°C  
POWER RATING  
BOARD  
PACKAGE  
RqJC  
RqJA  
High-K(2)  
High-K(3)  
D
39.4°C/W  
1.4°C/W  
100°C/W  
48.5°C/W  
10 mW/°C  
1.25 W  
2.58 W  
0.8 W  
0.65 W  
1.34 W  
DRB  
20.6 mW/°C  
1.65 W  
(1) These thermal data are taken at standard JEDEC test conditions and are useful for the thermal performance comparison of different  
packages. The cooling condition and thermal impedance RqJA of practical design is specific.  
(2) The JEDEC test board JESD51-7, 3-inch x 3-inch, 4-layer with 1-oz internal power and ground planes and 2-oz top and bottom trace  
layers.  
(3) The JEDEC test board JESD51-5 with direct thermal pad attach, 3-inch x 3-inch, 4-layer with 1-oz internal power and ground planes and  
2-oz top and bottom trace layers.  
RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.5  
6.8  
3
TYP  
7.2  
MAX  
UNIT  
V
Input supply voltage (TPS28225)  
Input supply voltage (TPS28226)  
Power input voltage for the TPS28225  
Operating junction temperature range  
8
8
VDD  
7.2  
VIN  
TJ  
32 V–VDD  
125  
–40  
°C  
Copyright © 2006–2010, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): TPS28225 TPS28226  
12345678...38

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TPS28225DRBTG4 替代型号

型号 品牌 替代类型 描述 数据表
TPS28225DRBRG4 TI

完全替代

 8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver 8-SON -40 to 125
TPS28225DRBR TI

完全替代

 High-Frequency 4-A Sink Synchronous MOSFET Driver
TPS28225DRBT TI

类似代替

 High-Frequency 4-A Sink Synchronous MOSFET Driver

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