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TPS28226DRBT PDF预览

TPS28226DRBT

更新时间： 2024-11-18 04:27:35
品牌 Logo 应用领域
德州仪器 - TI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
35页 1135K
描述
High-Frequency 4-A Sink Synchronous MOSFET Drivers

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TPS28226DRBT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DFN
包装说明：HVSON, SOLCC8,.12,25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：1.18
高边驱动器：YES接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：S-PDSO-N8JESD-609代码：e4
长度：3 mm湿度敏感等级：2
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流：6 A标称输出峰值电流：6 A
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装等效代码：SOLCC8,.12,25封装形状：SQUARE
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：7.2 V认证状态：Not Qualified
座面最大高度：1 mm子类别：MOSFET Drivers
最大供电电压：8 V最小供电电压：6.8 V
标称供电电压：7.2 V表面贴装：YES
温度等级：AUTOMOTIVE端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3 mmBase Number Matches：1

TPS28226DRBT 数据手册

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TPS28226  
www.ti.com  
SLUS791–OCTOBER 2007  
High-Frequency 4-A Sink Synchronous MOSFET Drivers  
1
FEATURES  
DESCRIPTION  
•
Drives Two N-Channel MOSFETs with 14-ns  
Adaptive Dead Time  
The TPS28226 is a high-speed driver for N-channel  
complimentary driven power MOSFETs with adaptive  
dead-time control. This driver is optimized for use in  
variety of high-current one and multi-phase dc-to-dc  
converters. The TPS28226 is a solution that provides  
highly efficient, small size low EMI emmissions.  
•
•
Gate Drive Voltage: 6.8 V Up to 8.8 V  
Wide Power System Train Input Voltage: 3 V  
Up to 27 V  
•
•
•
Wide Input PWM Signals: 2.0 V up to 13.2-V  
Amplitude  
The performance is achieved by up to 8.8-V gate  
drive voltage, 14-ns adaptive dead-time control, 14-ns  
propagation delays and high-current 2-A source and  
4-A sink drive capability. The 0.4-Ω impedance for  
the lower gate driver holds the gate of power  
MOSFET below its threshold and ensures no  
shoot-through current at high dV/dt phase node  
transitions. The bootstrap capacitor charged by an  
internal diode allows use of N-channel MOSFETs in  
half-bridge configuration.  
Capable Drive MOSFETs with ≥40-A Current  
per Phase  
High Frequency Operation: 14-ns Propagation  
Delay and 10-ns Rise/Fall Time Allow FSW - 2  
MHz  
•
•
Capable Propagate <30-ns Input PWM Pulses  
Low-Side Driver Sink On-Resistance (0.4 Ω)  
Prevents dV/dT Related Shoot-Through  
Current  
The TPS28226 features  
a 3-state PWM input  
•
•
3-State PWM Input for Power Stage Shutdown  
compatible with all multi-phase controllers employing  
3-state output feature. As long as the input stays  
within 3-state window for the 250-ns hold-off time, the  
driver switches both outputs low. This shutdown  
Space Saving Enable (input) and Power Good  
(output) Signals on Same Pin  
•
•
•
•
Thermal Shutdown  
UVLO Protection  
mode prevents  
output-voltage.  
a
load from the reversed-  
Internal Bootstrap Diode  
The other features include under voltage lockout,  
thermal shutdown and two-way enable/power good  
signal. Systems without 3-state featured controllers  
can use enable/power good input/output to hold both  
outputs low during shutting down.  
Economical SOIC-8 and Thermally Enhanced  
3-mm x 3-mm DFN-8 Packages  
•
High Performance Replacement for Popular  
3-State Input Drivers  
The TPS28226 is offered in an economical SOIC-8  
and thermally enhanced low-size Dual Flat No-Lead  
(DFN-8) packages. The driver is specified in the  
extended temperature range of –40°C to 125°C with  
the absolute maximum junction temperature 150°C.  
APPLICATIONS  
•
Multi-Phase DC-to-DC Converters with Analog  
or Digital Control  
•
•
•
Desktop and Server VRMs and EVRDs  
Portable/Notebook Regulators  
Synchronous Rectification for Isolated Power  
Supplies  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
UNLESS OTHERWISE NOTED this document contains  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007, Texas Instruments Incorporated  
1234567...35

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TPS28226DRBT 替代型号

型号 品牌 替代类型 描述 数据表
TPS28226DRBR TI

完全替代

 High-Frequency 4-A Sink Synchronous MOSFET Drivers
TPS28226DR TI

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TPS28226D TI

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