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TPS2828MDBVREP PDF预览

TPS2828MDBVREP

更新时间： 2024-01-02 15:37:16
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
24页 577K
描述
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER

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中文翻译

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TPS2828MDBVREP 技术参数

生命周期：Obsolete零件包装代码：DIE
包装说明：DIE,针数：5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.73
Is Samacsys：N高边驱动器：NO
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：S-XUUC-N5
功能数量：1端子数量：5
最高工作温度：125 °C最低工作温度：-40 °C
标称输出峰值电流：2 A封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：SQUARE
封装形式：UNCASED CHIP认证状态：Not Qualified
最大供电电压：14 V最小供电电压：4 V
标称供电电压：10 V表面贴装：YES
温度等级：AUTOMOTIVE端子形式：NO LEAD
端子位置：UPPER断开时间：0.05 µs
接通时间：0.05 µsBase Number Matches：1

TPS2828MDBVREP 数据手册

 浏览型号TPS2828MDBVREP的Datasheet PDF文件第2页浏览型号TPS2828MDBVREP的Datasheet PDF文件第3页浏览型号TPS2828MDBVREP的Datasheet PDF文件第4页浏览型号TPS2828MDBVREP的Datasheet PDF文件第5页浏览型号TPS2828MDBVREP的Datasheet PDF文件第6页浏览型号TPS2828MDBVREP的Datasheet PDF文件第7页 
TPS2816-EP, TPS2817-EP, TPS2818-EP  
TPS2819-EP, TPS2828-EP, TPS2829-EP  
www.ti.com  
SGDS039–FEBRUARY 2008  
SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER  
1
FEATURES  
•
Controlled Baseline  
TPS2816, TPS2817  
TPS2818, TPS2819  
DBV PACKAGE  
(TOP VIEW)  
–
–
–
One Assembly Site  
One Test Site  
One Fabrication Site  
•
•
Extended Temperature Performance of –55°C  
to 125°C  
1
2
5
V
V
CC  
DD  
Enhanced Diminishing Manufacturing Sources  
(DMS) Support  
GND  
IN  
•
•
•
Enhanced Product-Change Notification  
3
4
OUT  
(1)  
Qualification Pedigree  
TPS2828, TPS2829  
DBV PACKAGE  
(TOP VIEW)  
Low-Cost Single-Channel High-Speed MOSFET  
Driver  
•
•
ICC . . . 15 µA Max (TPS2828, TPS2829)  
1
2
5
NC  
V
CC  
25 ns Max Rise/Fall Times and 40 ns Max  
Propagation Delay . . . 1 nF Load  
•
•
2 A Peak Output Current  
GND  
IN  
4 V to 14 V Driver Supply Voltage Range;  
Internal Regulator Extends Range to 40 V  
(TPS2816, TPS2817, TPS2818, TPS2819)  
3
4
OUT  
NC − No internal connection  
•
•
5-pin SOT-23 Package  
–55°C to 125°C Ambient-Temperature  
Operating Range  
•
Highly Resistant to Latch-ups  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not limited  
to, Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this component beyond specified  
performance and environmental limits.  
DESCRIPTION/ORDERING INFORMATION  
The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A  
into highly capacitive loads. High switching speeds (tr and tf = 14 ns typ) are obtained with the use of BiCMOS  
outputs. Typical threshold switching voltages are 2/3 and 1/3 of VCC. The design inherently minimizes  
shoot-through current.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
UNLESS OTHERWISE NOTED this document contains  
Copyright © 2008, Texas Instruments Incorporated  
PRODUCTION DATA information current as of publication date.  
Products conform to specifications per the terms of Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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