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TPS2421-1DDAR PDF预览

TPS2421-1DDAR

更新时间: 2024-09-19 13:14:51
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
22页 1445K
描述
3-V-20-V, 33mΩ, 1.8-5.5A eFuse 8-SO PowerPAD -40 to 125

TPS2421-1DDAR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:HLSOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:12 weeks
风险等级:0.79可调阈值:YES
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUITJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.89 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:5.5 A封装主体材料:PLASTIC/EPOXY
封装代码:HLSOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE
峰值回流温度(摄氏度):260电源:3/20 V
认证状态:Not Qualified座面最大高度:1.7 mm
子类别:Power Management Circuits最大供电电压 (Vsup):20 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

TPS2421-1DDAR 数据手册

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TPS2421-1  
TPS2421-2  
www.ti.com .................................................................................................................................................. SLUS907AJANUARY 2009REVISED MARCH 2009  
3-V to 20-V Integrated FET Hot Swap  
1
FEATURES  
DESCRIPTION  
2
Integrated Pass MOSFET  
3.3-V to 20-V Bus Operation  
Programmable Fault Current  
The TPS2421 provides highly integrated hot swap  
power management and superior protection in  
applications where the load is powered by voltages  
between 3.0 V and 20 V. These devices are very  
effective in systems where a voltage bus must be  
protected to prevent shorts from interrupting or  
damaging the unit. The TPS2421 is an easy to use  
devices in an 8-pin PowerPad™ SO-8 package.  
Current Limit Proportionally Larger than Fault  
Current  
Programmable Fault Timer  
Internal MOSFET Power Limiting  
Latch-Off on Fault (-1) and Retry (-2) Versions  
SO-8 PowerPad™ Package  
The TPS2421 has multiple programmable protection  
features. Load protection is accomplished by a  
non-current limiting fault threshold, a hard current  
limit, and a fault timer. The current dual thresholds  
allow the system to draw short high current pulses,  
while the fault timer is running, without causing a  
voltage droop at the load. An example of this is a disk  
drive startup. This technique is ideal for loads that  
experience brief high demand, but benefit from  
protection levels in-line with their average current  
draw.  
–40°C to 125°C Junction Temperature Range  
APPLICATIONS  
RAID Arrays  
Telecommunications  
Plug-In Circuit Boards  
Disk Drive  
Hotswap MOSFET protection is provided by power  
limit circuitry which protects the internal MOSFET  
against SOA related failures.  
The TPS2421 is available in latch-off on fault (-1) and  
retry on fault (-2).  
3 V to 20 V IN  
VIN  
EN  
VOUT  
FLT  
3
2
7
1
OUT  
(A)  
GND  
4
CT  
6
ISET  
5
PG  
8
CVIN  
(A)  
COUT  
(A)  
Figure 1. Typical Application  
NOTE:  
(A) Required only in systems with lead and/or load inductance.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
PowerPad is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009, Texas Instruments Incorporated  

TPS2421-1DDAR 替代型号

型号 品牌 替代类型 描述 数据表
TPS2421-1DDA TI

完全替代

3-V to 20-V Integrated FET Hot Swap

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