Datasheet > TPR1000

TPR1000

更新时间： 2024-09-20 03:26:43

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GHZTECH		晶体双极型晶体管局域网
页数	文件大小	规格书
2页	71K
描述
high power COMMON BASE bipolar transistor.

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TPR1000 数据手册

TPR 1000

1000 Watts, 45 Volts, Pulsed

Avionics 1090 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55KV, Style 1

Common Base

The TPR 1000 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1090 MHz. The device

has gold thin-film metallization for proven highest MTTF. The transistor

includes input returns for fast rise time. Low thermal resistance package

reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC²

2900 Watts

Maximum Voltage and Current

BVces

BVebo Emitter to Base Voltage

Ic Collector Current

Collector to Base Voltage

65 Volts

3.5 Volts

80 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP MAX UNITS

Power Out

Power Input

Power Gain

Collector Efficiency

Rise Time

F = 1090 MHz

Vcc = 45 Volts

PW = 10 µsec

DF = 1%

1000

6.0

Watts

Pout

250

9:1

t_r

VSWR¹

Load Mismatch Tolerance

F = 1030 MHz

Bvebo^3,4

BVces⁴

h_FE

θjc²

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Ie = 50mA

Ic = 100mA

Ic = 1000mA, Vce = 5 V

3.5

Volts

Thermal Resistance

0.06

^oC/W

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

3: Cannot measure due to input return

4: Per Side

Issue A June 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE

THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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