Datasheet > TPN6R303NC,LQ(S

TPN6R303NC,LQ(S

更新时间： 2024-11-05 15:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	233K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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TPN6R303NC,LQ(S 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

TPN6R303NC,LQ(S 数据手册

TPN6R303NC

MOSFETs Silicon N-channel MOS (U-MOS)

TPN6R303NC

1. Applications

•

Lithium-Ion Secondary Batteries

•

Power Management Switches

2. Features

(1) Small, thin package

(2) Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

±20

(Silicon limit)

(Note 1)

(1 ms)

(Tc = 25)

(t = 10 s)

IDP

107

(Note 2)

(Note 3)

(Note 4)

1.9

0.7

Single-pulse avalanche energy

Avalanche current

EAS

IAR

Tch

Tstg

Channel temperature

Storage temperature

150

-55 to 150



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2012-09

2014-02-18

Rev.2.0

12 3 4 5 6 7...9

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