Datasheet > TPN7R506NH

TPN7R506NH

更新时间： 2023-12-06 20:09:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	263K
描述
N-ch MOSFET, 60 V, 0.0075 Ω@10V, TSON Advance, U-MOSⅧ-H

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TPN7R506NH 数据手册

TPN7R506NH

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPN7R506NH

1. Applications

•

DC-DC Converters

Switching Voltage Regulators

Motor Drivers

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 9.2 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 6.0 mΩ (typ.) (VGS = 10 V)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

TSON Advance

Start of commercial production

2013-01

2019-10-30

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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