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TPN8R903NL PDF预览

TPN8R903NL

更新时间: 2023-12-06 20:02:49
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 234K
描述
N-ch MOSFET, 30 V, 0.0089 Ω@10V, TSON Advance, U-MOSⅧ-H

TPN8R903NL 数据手册

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TPN8R903NL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPN8R903NL  
1. Applications  
Switching Voltage Regulators  
DC-DC Converters  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 2.5 nC (typ.)  
(3) Low drain-source on-resistance: RDS(ON) = 10.2 m(typ.) (VGS = 4.5 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
TSON Advance  
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
Power dissipation  
Power dissipation  
VDSS  
VGSS  
ID  
30  
±20  
37  
(Silicon limit)  
(Tc = 25 )  
(t = 1 ms)  
(Note 1), (Note 2)  
(Note 1)  
A
ID  
20  
(Note 1)  
IDP  
PD  
76  
(Tc = 25 )  
(t = 10 s)  
22  
W
(Note 3)  
(Note 4)  
(Note 5)  
PD  
1.9  
(t = 10 s)  
PD  
0.7  
Single-pulse avalanche energy  
Avalanche current  
EAS  
IAR  
Tch  
Tstg  
21  
mJ  
A
20  
Channel temperature  
Storage temperature  
150  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2013-06  
2014-02-18  
Rev.2.0  
1

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