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ꢄ ꢇꢃꢈ ꢉꢊꢊ ꢋ ꢆꢌꢃ ꢍꢎ ꢎ ꢍꢊ ꢇꢏꢐꢉꢂ ꢊꢌꢆ ꢍ ꢑ ꢂꢃ ꢇꢆ ꢋꢒꢋ ꢆꢌꢁ ꢍ ꢓꢋ ꢐꢌꢏꢎ ꢍ ꢔ ꢌꢉ ꢐꢐ ꢉꢕ
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SLIS035B − JUNE 1994 − REVISED SEPTEMBER 1995
D PACKAGE
(TOP VIEW)
• Low r
. . . 0.6 Ω Typ
• High-Voltage Outputs . . . 60 V
DS(on)
• Pulsed Current . . . 2.25 A Per Channel
• Fast Commutation Speed
SOURCE1
GATE2
GATE1
GND
1
2
3
4
8
7
6
5
SOURCE2
SOURCE3
DRAIN
GATE3
• Direct Logic-Level Interface
description
The TPIC3322L is a monolithic logic-level power DMOS transistor array that consists of three isolated
N-channel enhancement-mode DMOS transistors configured with a common drain and open sources.
The TPIC3322L is offered in a standard 8-pin small-outline surface-mount (D) package and is characterized for
operation over the case temperature range of −40°C to 125°C.
schematic diagram
DRAIN
6
Q1
Q2
Q3
D1
7
8
2
5
Z1
Z2
Z3
GATE2
GATE1
GATE3
1
3
4
SOURCE1
SOURCE2
SOURCE3
GND
†
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
DS
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Gate-to-source voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20 V
GS
Continuous drain current, each output, all outputs on, T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75 A
C
Continuous source-to-drain diode current, T = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75 A
C
Pulsed drain current, each output, I
, T = 25°C (see Note 1 and Figure 15) . . . . . . . . . . . . . . . . . . 2.25 A
max
C
Single-pulse avalanche energy, E , T = 25°C (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 mJ
AS
C
Continuous total power dissipation at (or below) T = 25°C (see Figure 15) . . . . . . . . . . . . . . . . . . . . 0.95 W
C
Operating virtual junction temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C
J
Operating case temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
C
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms and duty cycle = 2%.
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Copyright 1995, Texas Instruments Incorporated
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ꢟ ꢣ ꢠ ꢟꢘ ꢙꢭ ꢛꢚ ꢞ ꢦꢦ ꢤꢞ ꢜ ꢞ ꢝ ꢣ ꢟ ꢣ ꢜ ꢠ ꢨ
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