Datasheet > TPDV25

TPDV25

更新时间： 2024-01-25 06:37:58

品牌	Logo	应用领域
其他 - ETC		LTE
页数	文件大小	规格书
5页	426K
描述
ALTERNISTORS

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中文翻译

获取价格

数据手册

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TPDV25 数据手册

TPDV625 ---> TPDV1225

ALTERNISTORS

FEATURES

■

High commutation: > 88A/ms (400Hz)

■

Insulating voltage = 2500V_(RMS)

(UL Recognized: EB81734)

■

High voltage capability: V_DRM= 1200V

DESCRIPTION

The TPDV625 ---> TPDV1225 use a high perfor-

mance passivated glass alternistor technology.

Featuring very high commutation levels and high

surge current capability, this family is well adapted

to power control on inductive load (motor, trans-

former...)

TOP3

ABSOLUTE RATINGS (limiting values)

Symbol

I_T(RMS)

I_TSM

Parameter

Value

Unit

RMS on-state current (360° conduction angle)

Tc = 85°C

tp = 2.5ms

tp = 8.3ms

tp = 10ms

Non repetitive surge peak on-state current

(Tj initial = 25°C)

390

250

230

265

I²t

I²t value

A²s

dI/dt

Critical rate of rise of on-state current

Gate supply: I_G= 500mA dI_G/dt = 1A/µs

Repetitive

F = 50Hz

A/µs

Non repetitive

100

Tstg

Storage and operating junction temperature range

-40 to +150

-40 to +125

°C

Maximum lead soldering temperature during 10s at 4.5mm from case

260

TPDV

825

800

Symbol

Parameter

Unit

625

1025

1000

1225

V_DRM

V_RRM

Repetitive peak off-state voltage

Tj = 125°C

600

1200

September 2001 - Ed: 1A

1/5

12 3 4 5

中文翻译

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与TPDV25相关器件

型号	品牌	获取价格	描述	数据表
TPDV40	STMICROELECTRONICS	获取价格	40 A high voltage Triacs
TPDV425	STMICROELECTRONICS	获取价格	TRIAC,400V V(DRM),25A I(T)RMS,TO-218
TPDV425ALT	ETC	获取价格	TRIAC\|400V V(DRM)\|25A I(T)RMS\|TO-218
TPDV440	ETC	获取价格	TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218
TPDV440ALT	ETC	获取价格	TRIAC\|400V V(DRM)\|40A I(T)RMS\|TO-218
TPDV625	STMICROELECTRONICS	获取价格	ALTERNISTORS
TPDV625ALT	ETC	获取价格	TRIAC\|600V V(DRM)\|25A I(T)RMS\|TO-218
TPDV640	STMICROELECTRONICS	获取价格	ALTERNISTORS
TPDV640ALT	ETC	获取价格	TRIAC\|600V V(DRM)\|40A I(T)RMS\|TO-218
TPDV825	STMICROELECTRONICS	获取价格	ALTERNISTORS