TPDV825

更新时间： 2024-09-25 22:26:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		触发装置三端双向交流开关 LTE 局域网
页数	文件大小	规格书
5页	69K
描述
ALTERNISTORS

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中文翻译

获取价格

技术参数
数据手册
替代型号

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TPDV825 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	not_compliant	HTS代码：	8541.30.00.80
风险等级：	5.79	Is Samacsys：	N
Base Number Matches：	1

TPDV825 数据手册

TPDV 625 ---> 1225

ALTERNISTORS

FEATURES

HIGH COMMUTATION : > 88 A/ms (400Hz)

INSULATING VOLTAGE = 2500V

(RMS)

(UL RECOGNIZED : EB81734)

HIGH VOLTAGE CAPABILITY : V

= 1200 V

DRM

DESCRIPTION

The TPDV 625 ---> 1225 use a high performance

passivated glass alternistor technology. Featuring

very high commutation levels and high surge cur-

rent capability, this family is well adapted to power

control on inductive load (motor, transformer...)

TOP 3

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(360° conduction angle)

Tc = 85 °C

T(RMS)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

tp = 2.5 ms

tp = 8.3 ms

tp = 10 ms

390

250

230

265

TSM

I t

A s

I t value

dI/dt

Critical rate of rise of on-state current

Repetitive

F = 50 Hz

A/µs

Gate supply : I = 500mA di /dt = 1A/µs

Non

100

Repetitive

Tstg

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260

°C

Symbol

Parameter

TPDV

Unit

625

825

1025

1000

1225

Repetitive peak off-state voltage

Tj = 125 °C

600

800

1200

DRM

RRM

1/5

March 1995

12 3 4 5

中文翻译

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TPDV825 替代型号

型号	品牌	替代类型	描述	数据表
Q8025LH5TP	LITTELFUSE	功能相似	TRIAC ALTERNISTOR 800V 25A TO220
Q8025L6	LITTELFUSE	功能相似	Alternistor Triacs (6 A to 40 A)
Q8025R6	LITTELFUSE	功能相似	Alternistor Triacs (6 A to 40 A)

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