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TPC6902(TE85L,F)

更新时间： 2024-11-03 05:37:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 197K
描述
TRANSISTOR,BJT,PAIR,COMPLEMENTARY,30V V(BR)CEO,2A I(C),TSOP

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TPC6902(TE85L,F) 数据手册

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TPC6902  
TOSHIBA Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type  
TPC6902  
High-Speed Switching Applications  
Unit: mm  
MOS Gate Drive Applications  
NPN and PNP transistors are mounted on a compact and slim package.  
High DC current gain  
: NPN h = 200 to 500 (I = 0.2 A)  
FE C  
: PNP h = 200 to 500 (I = -0.2 A)  
FE  
C
Low collector-emitter saturation voltage  
: NPN V  
: PNP V  
= 0.14 V (max)  
= -0.2 V (max)  
CE (sat)  
CE (sat)  
High-speed switching  
: NPN t = 45 ns (typ.)  
f
: PNP t = 40 ns (typ.)  
f
Absolute Maximum Ratings (Ta = 25°C)  
Rating  
NPN  
Characteristics  
Collector-base voltage  
Symbol  
Unit  
PNP  
- 30  
- 30  
- 30  
- 7  
V
60  
50  
30  
7
V
V
V
V
A
A
A
CBO  
V
CEX  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
JEDEC  
JEITA  
―
―
I
DC  
2.0  
8.0  
0.5  
- 1.7  
- 8.0  
- 0.5  
C
Collector current  
(Note 1)  
I
Pulse  
CP  
TOSHIBA  
2-3T1A  
Base current  
I
B
Weight: 0.011 g (typ.)  
Collector power  
dissipation (t=10 s)  
(Note 2)  
Single-device  
operation  
P
P
P
1.0  
0.7  
W
C
C
C
Single-device  
operation  
Collector power  
dissipation (DC)  
(Note 2)  
W
Single-device  
value at dual  
operation  
0.6  
Thermal resistance,  
junction to ambient  
Single-device  
operation  
R
R
R
125  
178  
°C/W  
°C/W  
th (j-a)  
th (j-a)  
th (j-a)  
(t=10 s)  
(Note 2)  
Single-device  
operation  
Thermal resistance,  
junction to ambient (DC)  
(Note 2)  
Single-device  
value at dual  
operation  
208  
150  
Junction temperature  
T
°C  
°C  
j
Storage temperature range  
T
stg  
−55 to 150  
Note 1: Ensure that the junction temperature does not exceed 150°C.  
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-09-10  
1234567

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