Datasheet > TPC6D03

TPC6D03

更新时间： 2024-11-02 08:40:07

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
7页	200K
描述
High-Speed Switching Applications

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中文翻译

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数据手册

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TPC6D03 数据手册

TPC6D03

TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode

TPC6D03

High-Speed Switching Applications

DC-DC Converter Applications

Unit: mm

•

A PNP transistor and a Schottky barrier diode are mounted on a

compact and slim package.

Maximum Ratings

Transistor (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-collector voltage

Emitter-base voltage

−20

CBO

CEO

ECO

EBO

−9.5

−1.2

−2.0

−120

Collector current

Pulse

Base current

Collector power dissipation

(Q1 single-device operation)

400

150

°C

(Note 1)

Junction temperature

JEDEC

JEITA

―

Diode (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

TOSHIBA

2-3T1F

Repetitive peak reverse voltage

Average forward current

RRM

Weight: 0.011 g (typ.)

0.7

F (AV)

Peak one cycle surge forward current

(sine wave)

7.0

FSM

Power dissipation

(D1 single-device operation)

320

125

°C

(Note 1)

Junction temperature

Maximum Ratings for Transistor and Diode (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Total power dissipation

(simultaneous operation)

(Note 2)

600

°C

Storage temperature range

stg

−55~150

Thermal Resistance Characteristics

(for transistor and diode)

Characteristics

Symbol

Max

312

Unit

Thermal resistance, junction to

ambient (single-device operation)

th (j-a)

(Note 1)

°C/W

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick,

Cu area: 645 mm²)

Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)

Total power dissipation value when two devices are operated at the same time

2004-09-02

12 3 4 5 6 7

中文翻译

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