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TPC6D03(TE85L,F)

更新时间： 2024-02-14 19:16:02
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
8页 184K
描述
MOSFET N-CH 20V, 1.2A, RDSON=OHM

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中文翻译

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TPC6D03(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
Reach Compliance Code：unknown风险等级：5.6
Base Number Matches：1

TPC6D03(TE85L,F) 数据手册

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TPC6D03  
TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode  
TPC6D03  
High-Speed Switching Applications  
DC-DC Converter Applications  
Unit: mm  
•
A PNP transistor and a Schottky barrier diode are housed on a compact  
and slim package.  
Absolute Maximum Ratings  
Transistor (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-collector voltage  
Emitter-base voltage  
V
V
V
V
−20  
−20  
V
V
CBO  
CEO  
ECO  
EBO  
−9.5  
−9.5  
−1.2  
−2.0  
−120  
V
V
DC  
Collector current  
Pulse  
I
A
C
I
A
CP  
Base current  
I
mA  
B
Collector power dissipation  
(Q1 single-device operation)  
P
C
400  
150  
mW  
°C  
(Note 1)  
Junction temperature  
T
j
Diode (Ta = 25°C)  
JEDEC  
JEITA  
―
―
Characteristics  
Symbol  
Rating  
Unit  
Repetitive peak reverse voltage  
Average forward current  
V
30  
V
A
RRM  
TOSHIBA  
2-3T1A  
I
0.7  
F (AV)  
Weight: 0.011 g (typ.)  
Peak one cycle surge forward current  
(sine wave)  
I
7.0  
A
FSM  
Power dissipation  
(D1 single-device operation)  
P
D
320  
125  
mW  
°C  
(Note 1)  
Junction temperature  
T
j
Transistor and Diode (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Total power dissipation  
(simultaneous operation)  
P
T
600  
mW  
°C  
(Note 2)  
Storage temperature range  
T
stg  
−55 to 150  
Thermal Resistance Characteristics (for transistor and diode)  
Characteristics  
Symbol  
Max  
312  
Unit  
Thermal resistance, junction to  
ambient (single-device operation)  
R
th (j-a)  
(Note 1)  
°C/W  
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Total power dissipation value when two devices are operated at the same time  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-07-21  
12345678

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