5秒后页面跳转
TP0610L-TA PDF预览

TP0610L-TA

更新时间: 2024-09-28 13:01:07
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 49K
描述
Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

TP0610L-TA 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.63
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.18 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJEDEC-95代码:TO-226AA
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TP0610L-TA 数据手册

 浏览型号TP0610L-TA的Datasheet PDF文件第2页浏览型号TP0610L-TA的Datasheet PDF文件第3页浏览型号TP0610L-TA的Datasheet PDF文件第4页 
TP0610K  
Vishay Siliconix  
New Product  
P-Channel 60-V (D-S) MOSFET  
PRODUCT SUMMARY  
V(BR)DSS(min) (V)  
rDS(on)  
(
)
VGS(th) (V)  
ID (mA)  
–60  
6 @ V = –10 V  
–1 to –3.0  
–185  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D High-Side Switching  
D Ease in Driving Switches  
D Low Offset (Error) Voltage  
D Low-Voltage Operation  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low On-Resistance: 6 Ω  
D Low Threshold: –2 V (typ)  
D Battery Operated Systems  
D Power Supply Converter Circuits  
D Solid State Relays  
D Fast Swtiching Speed: 20 ns (typ) D High-Speed Circuits  
D Low Input Capacitance: 20 pF (typ) D Easily Driven Without Buffer  
D Gate-Source ESD Protection  
TO-236  
(SOT-23)  
G
S
1
2
Marking Code: 6Kwll  
6K = Part Number Code for TP0610K  
w = Week Code  
ll = Lot Traceability  
3
D
Top View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
–60  
"20  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
–185  
–115  
A
a
Continuous Drain Current  
I
D
T
A
mA  
b
Pulse Drain Current  
I
–800  
350  
DM  
T
A
= 25_C  
= 100_C  
a
P
Power Dissipation  
D
mW  
T
A
140  
a
Maximum Junction-to-Ambient  
R
350  
_C/W  
_C  
thJA  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
J
stg  
Notes  
a. Surface mounted on FR4 board.  
b. Pulse width limited by maximum junction temperature.  
Document Number: 71411  
S-04279—Rev. C, 16-Jul-01  
www.vishay.com  
11-1  

与TP0610L-TA相关器件

型号 品牌 获取价格 描述 数据表
TP0610LTR TEMIC

获取价格

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
TP0610LTR1 VISHAY

获取价格

180mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
TP0610L-TR1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P002 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P004 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P005 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P007 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P011 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P014 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta
TP0610N3P015 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, P-Channel, Silicon, Meta