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TND312S

更新时间： 2024-10-30 03:27:03
品牌 Logo 应用领域
三洋 - SANYO 驱动器脉冲光电二极管电机
页数 文件大小 规格书
5页 44K
描述
ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive

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中文翻译

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TND312S 技术参数

生命周期：Transferred零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.44
Is Samacsys：N内置保护：TRANSIENT
驱动器位数：2接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G8长度：5 mm
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：2 A
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE电源：4.5/25 V
认证状态：Not Qualified座面最大高度：1.8 mm
子类别：Peripheral Drivers最大供电电压：25 V
最小供电电压：4.5 V标称供电电压：5 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
断开时间：40 µs接通时间：35 µs
宽度：4.4 mmBase Number Matches：1

TND312S 数据手册

 浏览型号TND312S的Datasheet PDF文件第2页浏览型号TND312S的Datasheet PDF文件第3页浏览型号TND312S的Datasheet PDF文件第4页浏览型号TND312S的Datasheet PDF文件第5页 
Ordering number : ENA0417  
SANYO Sem iconductors  
DATA S HEET  
ExPD (Excellent Power Device)  
General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive,  
Switching Power Supply, and DC / DC Converter Applications  
TND312S  
Features  
•
Dual buffer.  
•
Monolithic structure (High voltage CMOS process adopted).  
Withstand voltage of 25V is assured.  
Wide range of operating voltage : 4.5V to 25V.  
Peak outpout current : 2A.  
•
•
•
•
•
•
Fast switching time (25ns typical at 1000pF load).  
Fully compatible input to TTL / CMOS. (V =not more than 2.6V, at V =4.5 to 25V)  
IH DD  
Built-in input pull-down resistance.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Supply Voltage  
Input Voltage  
V
0 to 25  
DD  
V
IN  
GND--0.3 to V +0.3  
DD  
V
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
max  
0.3  
--55 to +150  
--55 to +150  
W
D
Tj  
Tstg  
°C  
°C  
Recommended Operating Conditions at Ta=25°C  
Parameter  
Operating Supply Voltage  
Operating Temperature  
Symbol  
Conditions  
Ratings  
Unit  
V
V
DD  
Topr  
4.5 to 25  
--40 to +125  
°C  
Electrical Characteristics (AC Characteristics) at Ta=25°C, V =18V, V =5V  
DD  
IN  
Ratings  
Parameter  
Turn-On Rise Time  
Symbol  
Conditions  
Unit  
min  
typ  
max  
t
r
C =1000pF  
20  
25  
30  
45  
35  
40  
45  
60  
ns  
ns  
ns  
ns  
L
Turn-Off Fall Time  
t
f
C =1000pF  
L
t
t
1
C =1000pF  
L
D
Delay Time  
2
D
C =1000pF  
L
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before using any SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D0606IP TI IM TB-00001540  
No. A0417-1/5  
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