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TN3725 PDF预览

TN3725

更新时间: 2024-11-07 22:19:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管
页数 文件大小 规格书
6页 183K
描述
NPN Switching Transistor

TN3725 数据手册

 浏览型号TN3725的Datasheet PDF文件第2页浏览型号TN3725的Datasheet PDF文件第3页浏览型号TN3725的Datasheet PDF文件第4页浏览型号TN3725的Datasheet PDF文件第5页浏览型号TN3725的Datasheet PDF文件第6页 
Discrete POWER & Signal  
Technologies  
MMPQ3725  
TN3725A  
B
E
B
E
B
E
B
E
C
C
C
C
C
C
TO-226  
C
C
C
B
SOIC-16  
E
NPN Switching Transistor  
This device is designed for high speed core driver applications  
up to collector currents of 1.0 A. Sourced from Process 25.  
Absolute Maximum Ratings  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
60  
V
V
6.0  
1.2  
V
Collector Current - Continuous  
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN3725A  
MMPQ3725  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
1.0  
8.0  
50  
1.0  
8.0  
W
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
125  
Rθ  
°C/W  
°C/W  
°C/W  
JA  
125  
240  
Each Die  
1997 Fairchild Semiconductor Corporation  

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