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TN3467A PDF预览

TN3467A

更新时间: 2024-11-07 22:19:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号双极晶体管
页数 文件大小 规格书
6页 165K
描述
PNP Switching Transistor

TN3467A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.88Is Samacsys:N
其他特性:HIGH SPEED SATURATED SWITCHING最大集电极电流 (IC):1.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-226
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):175 MHz最大关闭时间(toff):90 ns
最大开启时间(吨):40 nsBase Number Matches:1

TN3467A 数据手册

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Discrete POWER & Signal  
Technologies  
TN3467A  
MMPQ3467  
B
E
B
E
B
E
B
E
C
C
C
C
C
C
TO-226  
C
C
B
C
E
SOIC-16  
PNP Switching Transistor  
This device is designed for high speed saturated switching applications  
at currents to 800 mA. Sourced from Process 70.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
40  
V
V
5.0  
1.2  
V
Collector Current - Continuous  
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
TN3467A  
MMPQ3467  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
1.0  
8.0  
50  
1.0  
8.0  
W
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
125  
°C/W  
°C/W  
°C/W  
JA  
125  
240  
Each Die  
1997 Fairchild Semiconductor Corporation  

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