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TN3512L-1 PDF预览

TN3512L-1

更新时间: 2024-11-20 15:54:51
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
2页 44K
描述
Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA

TN3512L-1 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:350 V
最大漏极电流 (ID):0.16 A最大漏源导通电阻:12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-226AAJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

TN3512L-1 数据手册

 浏览型号TN3512L-1的Datasheet PDF文件第2页 

与TN3512L-1相关器件

型号 品牌 获取价格 描述 数据表
TN3512L-1-18 VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L18 VISHAY

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160mA, 350V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
TN3512L18-1 VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L18-2 VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L-1TA VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L-1TR1 VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L-2-18 VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L-2TA VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512L-2TR1 VISHAY

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Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met
TN3512LTA VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.16A I(D), 350V, 1-Element, N-Channel, Silicon, Met