Datasheet > TN28F020-150

TN28F020-150

更新时间： 2024-09-18 22:42:07

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
38页	877K
描述
28F020 2048K (256K X 8) CMOS FLASH MEMORY

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TN28F020-150 数据手册

28F020 2048K (256K X 8) CMOS

FLASH MEMORY

Flash Electrical Chip-Erase

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

2 Second Typical Chip-Erase

Quick-Pulse Programming Algorithm

10 µS Typical Byte-Program

4 second Chip-Program

Noise Immunity Features

±10% V_CCTolerance

Maximum Latch-Up Immunity

through EPI Processing

100,000 Erase/Program Cycles

12.0 V ±5% V_PP

ETOX™ Nonvolatile Flash Technology

EPROM-Compatible Process Base

High-Volume Manufacturing

Experience

High-Performance Read

90 ns Maximum Access Time

CMOS Low Power Consumption

10 mA Typical Active Current

50 µA Typical Standby Current

0 Watts Data Retention Power

JEDEC-Standard Pinouts

32-Pin Plastic Dip

32-Lead PLCC

32-Lead TSOP

(See Packaging Spec., Order #231369)

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases

memory flexibility, while contributing to time and cost savings.

The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is

offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to

JEDEC standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)

process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field

combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V_PPsupply, the

28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse

programming and quick-erase algorithms.

Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,

low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance

for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates

into power savings when the device is deselected. Finally, the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA

on address and data pins, from –1 V to V_CC+ 1 V.

With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

December 1997

Order Number: 290245-009

12 3 4 5 6 7...38

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与TN28F020-150相关器件

型号	品牌	获取价格	描述	数据表
TN28F020-150C06	INTEL	获取价格	Flash, 256KX8, 150ns, PQCC32, 0.450 X 0.550 INCH, PLASTIC, LCC-32
TN28F020-90	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120	INTEL	获取价格	512K(64Kx8)CMOS FLASH MEMORY
TN29/19/7.5	FERROXCUBE	获取价格	Ferrite toroids
TN29/19/7.5-3C11	FERROXCUBE	获取价格	Ferrite toroids
TN29/19/7.5-3C90	FERROXCUBE	获取价格	Ferrite toroids
TN29/19/7.5-3E25	FERROXCUBE	获取价格	Ferrite toroids
TN2904A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 600MA I(C) \| TO-237VAR
TN2905	CENTRAL	获取价格	Power Transistors
TN2905	TI	获取价格	600mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-237, TO-237, 3 PIN

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